H30TBxx

PHASE CONTROL THYRISTOR H30TB/TLXX Symbol Characteristics Conditions TJ (0C) Value Unit BLOCKING PARAMETERS VRRM VDRM IRRM IDRM dV/dT Repetitive peak reverse voltage Repetitive peak off-stage voltage Repetitive peak reverse current Repetitive peak off-state current Rep. rate of change of voltage 125 125 V = VRRM V = VRRM @ 67%VDRM 125 125 125 200-1600 200-1600 15 15 600 V V mA mA V/μS CONDUCTING PARAMETERS IF(AV) IRMS ITSM I2 t VT V0 r0 di/dt Average on-state current RMS on-state current Surge on-state current I2 t Peak on-state voltage drop Threshold voltage On-state slope resistance Repetitive rate of rise of current dIG/dT = 1A/µS VGK = 1V Sine wave, 10mS without reverse voltage On-state current = 100A 125 125 125 125 125 180 sine, 50H Z, TC = 850C 30 50 500 1250 1.72 0.95 6.40 100 A A A A 2S V V mΩ A/μS TRIGGERING PARAMETERS IGT VGT IL IH PG –PEAK VFGM IFGM Gate trigger current Gate trigger voltage Latching Current Holding Current Maximum Peak Gate Power Maximum forward gate voltage Maximum forward gate current VD = 5V VD = 5V VD = 5V Pulse width 100μSec 25 25 25 25 100 2.50 300 200 30 12 10 mA V mA mA W V A THERMAL & MECHANICAL PARAMETERS R TH (J-C) RTH (C-HK) TJ TSTG F W Thermal impedance, 180 conduction, Sine Thermal impedance Maximum Permissible junction temperature Storage temperature range Mounting Torque Weight Junction to case Case to heatsink 0.93 0.30 125 -40 - 125 2 30 15 0 0 C/W C/W 0 0 C C NM gms For TB For TL HIND RECTIFIERS LTD 1 of 6 www.DataShe...