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KM736V747 Dataheets PDF



Part Number KM736V747
Manufacturers Samsung Semiconductor
Logo Samsung Semiconductor
Description (KM736V747 / KM718V847) 128Kx36 & 256Kx18 Flow-Through NtRAM
Datasheet KM736V747 DatasheetKM736V747 Datasheet (PDF)

KM736V747 KM718V847 Document Title 128Kx36 & 256Kx18 Flow-Through NtRAMTM 128Kx36 & 256Kx18-Bit Flow Through NtRAMTM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Changed tCD from 8.0ns to 8.5ns at -8 2. Changed tCYC from 13ns to 12ns at -10 3. Changed DC condition at Icc and parameters ISB1 ; from 10mA to 30mA, ISB2 ; from 10mA to 30mA Add VDDQ Supply voltage( 2.5V I/O ) Changed VOL Max value from 0.2V to 0.4V at 2.5V I/O. Final spec Release Remove VDDQ Supply voltage(2.5.

  KM736V747   KM736V747


HJ12003 KM736V747 KM718V847


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