KM718V847

KM736V747 KM718V847 Document Title 128Kx36 & 256Kx18 Flow-Through NtRAMTM 128Kx36 & 256Kx18-Bit Flow Through NtRAMTM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Changed tCD from 8.0ns to 8.5ns at -8 2. Changed tCYC from 13ns to 12ns at -10 3. Changed DC condition at Icc and parameters ISB1 ; from 10mA to 30mA, ISB2 ; from 10mA to 30mA Add VDDQ Supply voltage( 2.5V I/O ) Changed VOL Max value from 0.2V to 0.4V at 2.5V I/O. Final spec Release Remove VDDQ Supply voltage(2.5V I/O) Add VDDQ Supply voltage(2.5V I/O) Change tCD value form 8.5ns to 8.0ns at -8 Draft Date July. 15. 1998 Oct. 10. 1998 Remark Preliminary Preliminary 0.2 0.3 1.0 2.0 3.0 4.0 Dec. 10. 1998 Dec. 23. 1998 Jan. 29. 1999 Feb. 25. 1999 May. 13. 1999 July. 16. 1999 Preliminary Preliminary Final Final Final Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- July 1999 Rev 4.0 www.DataSheet.in KM736V747 KM718V847 128Kx36 & 256Kx18 Flow-Through NtRAMTM 128Kx36 & 256Kx18-Bit Flow-Through NtRAMTM FEATURES 3.3V+0.165V/-0.165V Power Supply. I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O Byte Writable Function. ...