(KM736V749 / KM718V849) 128Kx36 & 256Kx18 Pipelined NtRAM
KM736V749 KM718V849
Document Title
128Kx36 & 256Kx18 Pipelined NtRAMTM
128Kx36 & 256Kx18-Bit Pipelined NtRAM TM
Revis...
Description
KM736V749 KM718V849
Document Title
128Kx36 & 256Kx18 Pipelined NtRAMTM
128Kx36 & 256Kx18-Bit Pipelined NtRAM TM
Revision History
Rev. No. 0.0 0.1 History 1. Initial document. 1. Changed tCD,tOE from 4.0ns to 4.2ns at -75 2. Changed DC condition at Icc and parameters ISB1 ; from 10mA to 30mA, ISB2 ; from 10mA to 30mA. Add VDDQ Supply voltage( 2.5V I/O ) Changed VOL Max value from 0.2V to 0.4V at 2.5V I/O. Final spec Release. Remove VDDQ Supply voltage( 2.5V I/O ) Add VDDQ Supply voltage( 2.5V I/O ) Draft Date July.06. 1998 Oct. 10 . 1998 Remark Preliminary Preliminary
0.2 0.3 1.0 2.0 3.0
Dec. 10. 1998 Dec. 23. 1998 Jan. 29. 1999 Feb. 25. 1999 May. 13. 1999
Preliminary Preliminary Final Final Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
May 1999 Rev 3.0
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KM736V749 KM718V849
128Kx36 & 256Kx18 Pipelined NtRAMTM
128Kx36 & 256Kx18-Bit Pipelined NtRAMTM
FEATURES
3.3V+0.165V/-0.165V Power Supply. I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O. Byte Writable Function. Enable clock and suspend operation. Single READ/WRITE control pin. Self-Timed Write Cycle. Three Chip...
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