128Kx36 Synchronous SRAM
KM736V789
Document Title
128Kx36-Bit Synchronous Pipelined Burst SRAM
128Kx36 Synchronous SRAM
Revision History
Rev. N...
Description
KM736V789
Document Title
128Kx36-Bit Synchronous Pipelined Burst SRAM
128Kx36 Synchronous SRAM
Revision History
Rev. No. 0.0 0.1 0.2 0.3 History Initial draft Change 7.5 bin to 7.2 Change speed symbol 6.0/6.7/7.2/8.5 to 60/67/72/85 Draft Date May . 15. 1997 January . 13 . 1998 February. 02. 1998 Remark Preliminary Preliminary Preliminary Preliminary
Change DC characteristics VDD condition from VDD=3.3V+10%/-5% Change February. 12. 1998 Input/output leackage currant for ±1µA to ±2µA Modify Read timing & Power down cycle timing. Change ISB2 value from 30mA to 20mA. Remove DC characteristics ISB1 - L ver.& ISB2 - L ver . Remove Low power version. Add 119BGA(7x17 Ball Grid Array Package) Change Undershoot spec from -3.0V(pulse width≤20ns) to -2.0V(pulse width≤tCYC/2) Add Overshoot spec 4.6V((pulse width≤tCYC/2) Change VIH max from 5.5V to VDD+0.5V March. 11 . 1998
0.4
Preliminary
0.5
April. 14. 1998
Preliminary
0.6
May.13. 1998 Change ISB2 value from 20mA to 30mA. Change VDD condition from VDD=3.3V+10%/-5% to VDD=3.3V+0.3V/-0.165V. Modify DC characteristics( Input Leakage Current test Conditions) form VDD=VSS to VDD to Max. Final spec Release Add VDDQ Supply voltage( 2.5V ) Remove 119BGA(7x17 Ball Grid Array Package) . May.14.1998
Preliminary
0.7
Preliminary
1.0 2.0 3.0
May. 15. 1998 Dec. 02. 1998 Nov. 26. 1999
Final Final Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the...
Similar Datasheet