128Kx36 Synchronous SRAM
KM736V795
Document Title
128Kx36 Synchronous SRAM
128Kx36-Bit Synchronous Pipelined Burst SRAM
Revision History
Rev. ...
Description
KM736V795
Document Title
128Kx36 Synchronous SRAM
128Kx36-Bit Synchronous Pipelined Burst SRAM
Revision History
Rev. No.
0.0 0.1
History
Initial draft Change DC characteristics VDD condition from VDD=3.3V+10%/-5% Change Input/output leackage currant from ±1µA to ±2µA Modify Read timing & Power down cycle timing. Change ISB2 value from 30mA to 20mA. Remove DC characteristics ISB1 - L ver.& ISB2 - L ver . Remove Low power version. Change Undershoot spec from -3.0V(pulse width≤20ns) to -2.0V(pulse width≤tCYC/2) Add Overshoot spec 4.6V((pulse width≤tCYC/2) Change VIN max from 5.5V to VDD+0.5V
Draft Date
February. 02. 1998 February. 12. 1998
Remark
Preliminary Preliminary
0.2
April. 14. 1998
Preliminary
0.3
May. 13. 1998 Change ISB2 value from 20mA to 30mA. Change VDD condition from VDD=3.3V+10%/-5% to VDD=3.3V+0.3V/-0.165V. Modify DC characteristics( Input Leakage Current test Conditions) form VDD=VSS to VDD to Max. Final spec Release May. 14. 1998
Preliminary
0.4
Preliminary
1.0
May. 15. 1998
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
May. 1998 Rev 1.0
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KM736V795
128Kx36 Synchronous SRAM
128Kx36-Bit S...
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