KSH13007AF

KSH130 007AF KSH13007AF ◎ SEMIHOW REV.A1,Oct 2007 www.DataSheet.in KSH130 007AF KSH13007AF Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 8 Amperes NPN Silicon Power Transistor 80 Watts Absolute Maximum Ratings CHARACTERISTICS Collector-Base Voltage Collector-Emitter Collector Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Tc=25℃) Junction Temperature Storage Temperature TC=25℃ unless otherwise noted SYMBOL VCBO VCEO VEBO IC ICP IB PC TJ TSTG RATING 700 400 9 8 16 4 40 150 -65~150 UNIT V V V A A A W ℃ ℃ TO-220F 1. Base 2. Collector 3. Emitter 12 3 Electrical Characteristics CHARACTERISTICS Collector-Emitter Breakdown Voltage Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage TC=25℃ unless otherwise noted SYMBOL VCEO IEBO hFE1 hFE2 VCE(sat) Test Condition IC=10mA, IB=0 VEB=9V,IC=0 VCE=5V,IC=2A VCE=5V,I 5V,IC=5A 5A IC=2A,IB=0.4A IC=5A,IB=1A IC=8A,IB=2A IC=2A,IB=0.4A IC=5A,IB=1A VCB=10V, f=0.1MHz Min 400 Typ. Max Unit V 1 8 5 60 30 1 2 3 1.2 1.6 80 4 1.6 3.0 0.7 ㎃ V V V V V ㎊ ㎒ ㎲ ㎲ ㎲ *Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn on Time Storage Time Fall Time * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% VBE(sat) Cob fT ton tstg tF VCE=10V,I , C=0.5A Vcc=125V, Ic=5A IB1=1A, IB2= -1A RL=50Ω Note. R hFE1 Classificat...