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KSH13009

SHANTOU HUASHAN

NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd. N P N S I L I C O N T RANSISTOR KSH13009 ¨€ HIGH VOLTAGE SWITCH MODE APPLI...


SHANTOU HUASHAN

KSH13009

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Shantou Huashan Electronic Devices Co.,Ltd. N P N S I L I C O N T RANSISTOR KSH13009 ¨€ HIGH VOLTAGE SWITCH MODE APPLICICATIONS High Speed Switching Suitable for Switching Regulator and Montor Control ¨€ ABSOLUTE MAXIMUM RATINGS£¨ Ta=25¡æ£© T stg ¡ª¡ªStorage Temperature¡-¡-¡-¡-¡-¡-¡-¡-¡-¡- 55~150¡æ T j ¡ª¡ªJunction Temperature¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡150¡æ PC¡ª¡ªCollector Dissipation £¨ T c=25¡æ £ © ¡-¡-¡-¡-¡-¡-¡-¡100W VCBO ¡ª¡ªCollector-Base Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡700V VCEO¡ª¡ªCollector-Emitter Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡-¡400V VEBO ¡ª¡ª Emitter-Base Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡9V IC¡ª¡ªCollector Current£¨ DC£©¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡12A IB¡ª¡ªBase Current¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡¡¡¡¡6A TO-220 1¨D Base£¬ B 2¨D Collector£¬ C 3¨D Emitter, E ¨€ ELECTRICAL CHARACTERISTICS£¨ Ta=25¡æ£© Symbol Characteristics Collector-Emitter Breakdown Voltage Emitter-Base Cut-off Current 8 Min 400 1 40 Typ Max Unit V m A Test Conditions BVCEO IEBO HFE£¨ 2£© VCE(sat)1 VCE(sat)2 VCE(sat)3 VBE(sat)1 VBE(sat)2 Cob fT tON tSTG tF IC=10mA, IB=0 VEB=9V, IC=0 VCE=5V, IC=5A VCE=5V, IC=8A HFE£¨ 1£© DC Current Gain Collector- Emitter Saturation Voltage 6 30 1 V IC=5A, IB =1A IC=8A, IB =1.6A IC=12A, IB =3A IC=5A, IB=1A IC=8A, IB =1.6A VCB=10V,f=0.1MHz 1.5 3 Base-Emitter Saturation Voltage Output Capacitance Current Gain-Bandwidth Product Turn On Time Storage Time Fall Time 4 1. 1 3 0.7 180 1.2 1. 6 V V V V pF MHz VCE =10V,IC=0.5A ¦Ì s VCC=125V, IC=8A, ¦Ì s ¦Ì s IB1 =1.6A,IB2 =-1.6A www.Dat...




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