Shantou Huashan Electronic Devices Co.,Ltd.
N P N S I L I C O N T RANSISTOR
KSH13009
¨€ HIGH VOLTAGE SWITCH MODE APPLI...
Shantou Huashan Electronic Devices Co.,Ltd.
N P N S I L I C O N T RANSISTOR
KSH13009
¨€ HIGH VOLTAGE SWITCH MODE APPLICICATIONS
High Speed Switching Suitable for Switching
Regulator and Montor Control ¨€
ABSOLUTE MAXIMUM RATINGS£¨ Ta=25¡æ£©
T stg ¡ª¡ªStorage Temperature¡-¡-¡-¡-¡-¡-¡-¡-¡-¡- 55~150¡æ T j ¡ª¡ªJunction Temperature¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡150¡æ PC¡ª¡ªCollector Dissipation £¨ T c=25¡æ £ © ¡-¡-¡-¡-¡-¡-¡-¡100W VCBO ¡ª¡ªCollector-Base Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡700V VCEO¡ª¡ªCollector-Emitter Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡-¡400V VEBO ¡ª¡ª Emitter-Base Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡9V IC¡ª¡ªCollector Current£¨ DC£©¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡12A IB¡ª¡ªBase Current¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡¡¡¡¡6A
TO-220
1¨D Base£¬ B
2¨D Collector£¬ C 3¨D Emitter, E
¨€ ELECTRICAL CHARACTERISTICS£¨ Ta=25¡æ£©
Symbol Characteristics Collector-Emitter Breakdown Voltage Emitter-Base Cut-off Current 8 Min 400 1 40 Typ Max Unit V m A Test Conditions
BVCEO IEBO HFE£¨ 2£© VCE(sat)1 VCE(sat)2 VCE(sat)3 VBE(sat)1 VBE(sat)2 Cob fT tON tSTG tF
IC=10mA, IB=0 VEB=9V, IC=0 VCE=5V, IC=5A VCE=5V, IC=8A
HFE£¨ 1£© DC Current Gain Collector- Emitter Saturation Voltage
6
30
1 V
IC=5A, IB =1A IC=8A, IB =1.6A IC=12A, IB =3A IC=5A, IB=1A IC=8A, IB =1.6A VCB=10V,f=0.1MHz
1.5 3 Base-Emitter Saturation Voltage Output Capacitance Current Gain-Bandwidth Product Turn On Time Storage Time Fall Time 4 1. 1 3 0.7 180
1.2
1. 6
V V
V
V
pF
MHz VCE =10V,IC=0.5A ¦Ì s VCC=125V, IC=8A, ¦Ì s ¦Ì s IB1 =1.6A,IB2 =-1.6A
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