KSH13009L
KSH13009L
◎ SEMIHOW REV.A0,May 2003
www.DataSheet.in
KSH13009L
KSH13009L
Switch Mode series NPN silicon P...
KSH13009L
KSH13009L
◎ SEMIHOW REV.A0,May 2003
www.DataSheet.in
KSH13009L
KSH13009L
Switch Mode series
NPN silicon Power
Transistor
- High voltage, high speed power switching - Suitable for switching
regulator, inverters motor controls
12 Amperes
NPN Silicon Power
Transistor 100 Watts
Absolute Maximum Ratings
CHARACTERISTICS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Tc=25℃) Junction Temperature Storage Temperature
TC=25℃ unless otherwise noted SYMBOL VCBO VCEO VEBO IC ICP IB PC TJ TSTG RATING 700 400 9 12 24 6 130 150 -65~150 UNIT V V V A A A W ℃ ℃
TO-3P 1. Base 2. Collector 3. Emitter
12 3
Electrical Characteristics
CHARACTERISTICS Collector-Emitter Sustaining Voltage Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage
TC=25℃ unless otherwise noted SYMBOL VCEO(sus) IEBO hFE1 hFE2 VCE(sat) Test Condition IC=10mA, IB=0 VEB=9V,IC=0 VCE=5V,IC=5A VCE=5V,IC=8A IC=5A,IB=1A IC=8A,IB=1.6A IC=12A,IB=3A IC=5A,IB=1A IC=8A,IB=1.6A VCB=10V, f=0.1MHz VCE=10V,IC=0.5A Vcc=125V, Ic=8A IB1=1.6A, IB2= -1.6A RL=15.6Ω 4 1.1 3 0.7 180 8 6 Min 400 1 40 30 1 1.5 3 1.2 1.6 V V V V V pF MHz μS μS μS Typ. Max Unit V mA
*Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn on Time Storage Time Fall Time
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
VBE(sat) Cob fT ton tstg tF
Note :
hFE1 Classification
R :8 ~ 17,
O : 1...