DatasheetsPDF.com

KSH13009W

SHANTOU HUASHAN

NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd. N P N S I L I C O N T RAN S I S T O R KSH13009W █ HIGH VOLTAGE SWITCH MOD...


SHANTOU HUASHAN

KSH13009W

File Download Download KSH13009W Datasheet


Description
Shantou Huashan Electronic Devices Co.,Ltd. N P N S I L I C O N T RAN S I S T O R KSH13009W █ HIGH VOLTAGE SWITCH MODE APPLICICATIONS High Speed Switching Suitable for Switching Regulator and Montor Control █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃ PC——Collector Dissipation (Tc=25℃) …………………… 100W VCBO——Collector-Base Voltage…………………………… 700V VCEO——Collector-Emitter Voltage………………………… 400V VEBO —— Emitter-Base Voltage ……………………………… 9V IC——Collector Current(DC)……………………………… 12A IB——Base Current……………………………………………6A TO-263(D2PAK) 1―Base,B 2―Collector,C 3―Emitter, E █ ELECTRICAL CHARACTERISTICS(Ta=25℃) Symbol Characteristics Collector-Emitter Breakdown Voltage Emitter-Base Cut-off Current Min Typ Max Unit Test Conditions BVCEO IEBO HFE(1) HFE(2) VCE(sat)1 VCE(sat)2 VCE(sat)3 VBE(sat)1 VBE(sat)2 Cob fT tON tSTG tF 400 1 8 6 40 30 1 1.5 3 V mA IC=10mA, IB=0 VEB=9V, IC=0 VCE=5V, IC=5A VCE=5V, IC=8A DC Current Gain Collector- Emitter Saturation Voltage V V V V V pF MHz IC=5A, IB=1A IC=8A, IB=1.6A IC=12A, IB=3A IC=5A, IB=1A IC=8A, IB=1.6A VCB=10V,f=0.1MHz VCE=10V,IC=0.5A Base-Emitter Saturation Voltage Output Capacitance Current Gain-Bandwidth Product Turn On Time Storage Time Fall Time 4 180 1.2 1.6 1.1 3 0.7 μs μs μs VCC=125V, IC=8A, IB1=1.6A,IB2=-1.6A www.DataSheet.in Shantou Huashan Electronic Devices Co.,Ltd. N P N S I L I C O N T RAN S I S T O R KSH13009W www.DataSheet.in Shantou Hu...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)