Shantou Huashan Electronic Devices Co.,Ltd.
N P N S I L I C O N T RAN S I S T O R
KSH13009W
█ HIGH VOLTAGE SWITCH MOD...
Shantou Huashan Electronic Devices Co.,Ltd.
N P N S I L I C O N T RAN S I S T O R
KSH13009W
█ HIGH VOLTAGE SWITCH MODE APPLICICATIONS
High Speed Switching Suitable for Switching
Regulator and Montor Control
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃ PC——Collector Dissipation (Tc=25℃) …………………… 100W VCBO——Collector-Base Voltage…………………………… 700V VCEO——Collector-Emitter Voltage………………………… 400V VEBO —— Emitter-Base Voltage ……………………………… 9V IC——Collector Current(DC)……………………………… 12A IB——Base Current……………………………………………6A
TO-263(D2PAK)
1―Base,B
2―Collector,C 3―Emitter, E
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol Characteristics Collector-Emitter Breakdown Voltage Emitter-Base Cut-off Current Min Typ Max Unit Test Conditions
BVCEO IEBO HFE(1) HFE(2) VCE(sat)1 VCE(sat)2 VCE(sat)3 VBE(sat)1 VBE(sat)2 Cob fT tON tSTG tF
400 1 8 6 40 30 1 1.5 3
V mA
IC=10mA, IB=0 VEB=9V, IC=0 VCE=5V, IC=5A VCE=5V, IC=8A
DC Current Gain Collector- Emitter Saturation Voltage
V V V V V pF MHz
IC=5A, IB=1A IC=8A, IB=1.6A IC=12A, IB=3A IC=5A, IB=1A IC=8A, IB=1.6A VCB=10V,f=0.1MHz
VCE=10V,IC=0.5A
Base-Emitter Saturation Voltage Output Capacitance Current Gain-Bandwidth Product Turn On Time Storage Time Fall Time 4 180
1.2 1.6
1.1 3 0.7
μs μs μs VCC=125V, IC=8A, IB1=1.6A,IB2=-1.6A
www.DataSheet.in
Shantou Huashan Electronic Devices Co.,Ltd.
N P N S I L I C O N T RAN S I S T O R
KSH13009W
www.DataSheet.in
Shantou Hu...