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SVC353

Sanyo Semicon Device

Varactor Diode

Ordering number :EN3040B SVC353 Diffused Junction Type Sillicon Diode Composite Varactor Diode for AM Receiver Low-Vol...


Sanyo Semicon Device

SVC353

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Description
Ordering number :EN3040B SVC353 Diffused Junction Type Sillicon Diode Composite Varactor Diode for AM Receiver Low-Voltage Electronic Tuning Use Features · Excellent matching characteristics because of composite type. · The number of manufacturing processes can be reduced and automatic mounting is possible because of composite type. · High capacitance ratio and high quality factor. · Possible to offer the SVC353 devices in a tape reel packaging. · Surface mount type. Package Dimensions unit:mm 1214B [SVC353] SANYO:MFP6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Reverse Voltage Junction Temperature Storage Temperature Symbol VR Tj Tstg Conditions Ratings 16 125 –55 to +125 Unit V ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Breakdown Voltage Reverse Current (One diode) Interterminal Capacitance (Average) Symbol V(BR)R IR C1V C6V C8V Quality Factor Capacitance Ratio Matching Tolerance Q CR ∆Cm*2 IR=10µA VR=9V VR=1V, f=1MHz*1 VR=6V, f=1MHz VR=8V, f=1MHz VR=1V, f=1MHz C1V/C8V, f=1MHz VR=1V to 8V, f=1MHz 21.0 200 17.5 24.5 ±2.5 % 460.0* 52.0 27.0 Conditions Ratings min 16 100 540.0* typ max Unit V nA pF pF pF Note)*1:1MHz signal:20mVrms Note)*2:∆Cm= (CDn–CD3) / CD3×100 Note)*:The SVC353 is classified by C1V as follows: Electrical Connection Rank R S T C1V(pF) 460.0 to 491.0 482.0 to 515.0 505.0 to 540.0 A:Anode C:Cathode SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOK...




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