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K1058 Dataheets PDF



Part Number K1058
Manufacturers Renesas Technology
Logo Renesas Technology
Description Silicon N-Channel MOSFET
Datasheet K1058 DatasheetK1058 Datasheet (PDF)

2SK1056, 2SK1057, 2SK1058 Silicon N Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Features • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes • Suitable for audio power amplifier Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G 1 2 3 S REJ03G0906-0200 (Previous: ADE-208-1244) Rev.2.00.

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2SK1056, 2SK1057, 2SK1058 Silicon N Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Features • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes • Suitable for audio power amplifier Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G 1 2 3 S REJ03G0906-0200 (Previous: ADE-208-1244) Rev.2.00 Sep 07, 2005 1. Gate 2. Source (Flange) 3. Drain Rev.2.00 Sep 07, 2005 page 1 of 5 2SK1056, 2SK1057, 2SK1058 Absolute Maximum Ratings Item Drain to source voltage 2SK1056 2SK1057 2SK1058 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at TC = 25°C Electrical Characteristics Symbol VDSX VGSS ID IDR Pch*1 Tch Tstg Item Drain to source 2SK1056 breakdown voltage 2SK1057 2SK1058 Gate to source breakdown voltage Gate to source cutoff voltage Drain to source saturation voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Note: 2. Pulse test Symbol V(BR)DSX V(BR)GSS VGS(off) VDS(sat) |yfs| Ciss Coss Crss ton toff Min 120 140 160 ±15 0.15 — 0.7 — — — — — Typ — — — — 1.0 600 350 10 180 60 Ratings 120 140 160 ±15 7 7 100 150 –55 to +150 (Ta = 25°C) Unit V V A A W °C °C (Ta = 25°C) Max Unit Test conditions — V ID = 10 mA, VGS = –10 V — 1.45 12 1.4 — — — — — V IG = ±100 µA, VDS = 0 V ID = 100 mA, VDS = 10 V V ID = 7 A, VGD = 0 *2 S ID = 3 A, VDS = 10 V *2 pF VGS = –5 V, VDS = 10 V, pF f = 1 MHz pF ns VDD = 20 V, ID = 4 A ns Rev.2.00 Sep 07, 2005 page 2 of 5 2SK1056, 2SK1057, 2SK1058 Main Characteristics Power vs. Temperature Derating 150 100 50 Channel Dissipation Pch (W) Drain Current ID (A) 0 50 100 150 Case Temperature TC (°C) Typical Output Characteristics 10 8 VGS = 10 V 9 TC = 25°C 8 67 6 45 2 4 Pch 3 = 100 W 2 1 0 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Drain Current 10 VGD = 0 5 2 25°C 75°C = –25°C TC 1.0 0.5 0.2 0.1 0.1 0.2 0.5 1.0 2 5 Drain Current ID (A) 10 Drain to Source Saturation Voltage VDS (on) (V) Rev.2.00 Sep 07, 2005 page 3 of 5 Drain to Source Voltage VDS (V) Drain Current ID (A) Drain Current ID (A) Maximum Safe Operation Area 20 Ta = 25°C 10 5 2 ID max (Continuous) PW =PW1 sP=W11=0s0h1o0mtmss11sshhoott 1.0 = 25°C) Operation (T C DC 0.5 2SK1056 2SK1057 0.2 5 10 20 2SK1058 50 100 200 500 Drain to Source Voltage VDS (V) =2–525°C 75 T C Typical Transfer Characteristics 1.0 VDS = 10 V 0.8 0.6 0.4 0.2 0 0.4 0.8 1.2 1.6 2.0 Gate to Source Voltage VGS (V) Drain to Source Voltage vs. Gate to Source Voltage 10 8 TC = 25°C 6 5A 4 2 2A ID = 1 A 0 2 4 6 8 10 Gate to Source Voltage VGS (V) Input Capacitance Ciss (pF) Switching Time ton, toff (ns) Forward Transfer Admittance yfs (S) 2SK1056, 2SK1057, 2SK1058 1000 Input Capacitance vs. Gate Source Voltage 500 200 VDS = 10 V f = 1 MHz 100 0 –2 –4 –6 –8 –10 Gate to Source Voltage VGS (V) Forward Transfer Admittance vs. Frequency 3.0 1.0 0.3 0.1 0.03 0.01 TC = 25°C VDS = 10 V ID = 2 A 0.003 10 k 30 k 100 k 300 k 1 M 3 M 10 M Frequency f (Hz) Switching Time vs. Drain Current 500 200 ton 100 50 toff 20 10 5 0.1 0.2 0.5 1.0 2 5 Drain Current ID (A) 10 Switching Time Test Circuit Output RL= 2 Ω Input PW = 50 µs duty ratio =1% 50 Ω 20 V Input 10 % t on Output 90 % Waveforms 90 % t off 10 % Rev.2.00 Sep 07, 2005 page 4 of 5 2SK1056, 2SK1057, 2SK1058 Package Dimensions JEITA Package Code SC-65 RENESAS Code PRSS0004ZE-A Package Name TO-3P / TO-3PV 15.6 ± 0.3 φ3.2 ± 0.2 MASS[Typ.] 5.0g 4.8 ± 0.2 1.5 Unit: mm 1.0 5.0 ± 0.3 0.5 2.0 14.9 ± 0.2 19.9 ± 0.2 0.3 1.6 1.4 Max 2.0 2.8 18.0 ± 0.5 1.0 ± 0.2 3.6 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 0.6 ± 0.2 Ordering Information Part Name Quantity Shipping Container 2SK1056-E 360 pcs Box (Tube) 2SK1057-E 360 pcs Box (Tube) 2SK1058-E 360 pcs Box (Tube) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 5 of 5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfun.


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