Document
2SK1056, 2SK1057, 2SK1058
Silicon N Channel MOS FET
Application
Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162
Features
• Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes • Suitable for audio power amplifier
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D
G
1 2 3
S
REJ03G0906-0200 (Previous: ADE-208-1244)
Rev.2.00 Sep 07, 2005
1. Gate 2. Source
(Flange) 3. Drain
Rev.2.00 Sep 07, 2005 page 1 of 5
2SK1056, 2SK1057, 2SK1058
Absolute Maximum Ratings
Item
Drain to source voltage
2SK1056
2SK1057
2SK1058
Gate to source voltage
Drain current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note: 1. Value at TC = 25°C
Electrical Characteristics
Symbol VDSX
VGSS ID IDR
Pch*1 Tch Tstg
Item
Drain to source
2SK1056
breakdown voltage
2SK1057
2SK1058
Gate to source breakdown voltage
Gate to source cutoff voltage
Drain to source saturation voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Note: 2. Pulse test
Symbol V(BR)DSX
V(BR)GSS VGS(off) VDS(sat)
|yfs| Ciss Coss Crss ton toff
Min 120 140 160 ±15 0.15 — 0.7 — — — — —
Typ —
— — — 1.0 600 350 10 180 60
Ratings 120 140 160 ±15 7 7 100 150
–55 to +150
(Ta = 25°C) Unit
V
V A A W °C °C
(Ta = 25°C)
Max Unit
Test conditions
— V ID = 10 mA, VGS = –10 V
— 1.45 12 1.4 — — — — —
V IG = ±100 µA, VDS = 0 V ID = 100 mA, VDS = 10 V V ID = 7 A, VGD = 0 *2 S ID = 3 A, VDS = 10 V *2 pF VGS = –5 V, VDS = 10 V, pF f = 1 MHz
pF
ns VDD = 20 V, ID = 4 A ns
Rev.2.00 Sep 07, 2005 page 2 of 5
2SK1056, 2SK1057, 2SK1058
Main Characteristics
Power vs. Temperature Derating 150
100
50
Channel Dissipation Pch (W)
Drain Current ID (A)
0 50 100 150
Case Temperature TC (°C)
Typical Output Characteristics
10
8
VGS = 10 V 9
TC = 25°C
8
67
6
45
2
4
Pch 3
=
100
W
2 1 0
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs. Drain Current
10 VGD = 0
5
2
25°C
75°C =
–25°C
TC
1.0
0.5
0.2
0.1 0.1
0.2 0.5 1.0 2 5 Drain Current ID (A)
10
Drain to Source Saturation Voltage VDS (on) (V)
Rev.2.00 Sep 07, 2005 page 3 of 5
Drain to Source Voltage VDS (V)
Drain Current ID (A)
Drain Current ID (A)
Maximum Safe Operation Area
20 Ta = 25°C
10 5
2
ID
max
(Continuous) PW =PW1 sP=W11=0s0h1o0mtmss11sshhoott
1.0
= 25°C) Operation (T C DC
0.5
2SK1056 2SK1057
0.2 5 10 20
2SK1058 50 100 200 500
Drain to Source Voltage VDS (V)
=2–525°C
75
T
C
Typical Transfer Characteristics 1.0
VDS = 10 V 0.8
0.6
0.4
0.2
0 0.4 0.8 1.2 1.6 2.0 Gate to Source Voltage VGS (V)
Drain to Source Voltage vs. Gate to Source Voltage
10 8 TC = 25°C
6 5A
4
2 2A ID = 1 A
0 2 4 6 8 10 Gate to Source Voltage VGS (V)
Input Capacitance Ciss (pF) Switching Time ton, toff (ns)
Forward Transfer Admittance yfs (S)
2SK1056, 2SK1057, 2SK1058
1000
Input Capacitance vs. Gate Source Voltage
500
200
VDS = 10 V f = 1 MHz
100 0 –2 –4 –6 –8 –10 Gate to Source Voltage VGS (V)
Forward Transfer Admittance vs. Frequency
3.0
1.0
0.3 0.1
0.03 0.01
TC = 25°C VDS = 10 V ID = 2 A
0.003 10 k 30 k 100 k 300 k 1 M 3 M 10 M
Frequency f (Hz)
Switching Time vs. Drain Current 500
200 ton 100
50 toff
20
10
5 0.1 0.2
0.5 1.0 2
5
Drain Current ID (A)
10
Switching Time Test Circuit Output RL= 2 Ω
Input
PW = 50 µs duty ratio =1%
50 Ω
20 V
Input 10 % t on
Output 90 %
Waveforms
90 %
t off 10 %
Rev.2.00 Sep 07, 2005 page 4 of 5
2SK1056, 2SK1057, 2SK1058
Package Dimensions
JEITA Package Code SC-65
RENESAS Code PRSS0004ZE-A
Package Name TO-3P / TO-3PV
15.6 ± 0.3 φ3.2 ± 0.2
MASS[Typ.] 5.0g
4.8 ± 0.2 1.5
Unit: mm
1.0 5.0 ± 0.3
0.5
2.0 14.9 ± 0.2 19.9 ± 0.2
0.3
1.6 1.4 Max
2.0
2.8
18.0 ± 0.5
1.0 ± 0.2
3.6 0.9 1.0
5.45 ± 0.5
5.45 ± 0.5
0.6 ± 0.2
Ordering Information
Part Name
Quantity
Shipping Container
2SK1056-E
360 pcs
Box (Tube)
2SK1057-E
360 pcs
Box (Tube)
2SK1058-E
360 pcs
Box (Tube)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Sep 07, 2005 page 5 of 5
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfun.