Silicon N-Channel MOSFET
2SK1056, 2SK1057, 2SK1058
Silicon N Channel MOS FET
Application
Low frequency power amplifier Complementary pair with 2...
Description
2SK1056, 2SK1057, 2SK1058
Silicon N Channel MOS FET
Application
Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162
Features
Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D
G
1 2 3
S
REJ03G0906-0200 (Previous: ADE-208-1244)
Rev.2.00 Sep 07, 2005
1. Gate 2. Source
(Flange) 3. Drain
Rev.2.00 Sep 07, 2005 page 1 of 5
2SK1056, 2SK1057, 2SK1058
Absolute Maximum Ratings
Item
Drain to source voltage
2SK1056
2SK1057
2SK1058
Gate to source voltage
Drain current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note: 1. Value at TC = 25°C
Electrical Characteristics
Symbol VDSX
VGSS ID IDR
Pch*1 Tch Tstg
Item
Drain to source
2SK1056
breakdown voltage
2SK1057
2SK1058
Gate to source breakdown voltage
Gate to source cutoff voltage
Drain to source saturation voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Note: 2. Pulse test
Symbol V(BR)DSX
V(BR)GSS VGS(off) VDS(sat)
|yfs| Ciss Coss Crss ton toff
Min 120 140 160 ±15 0.15 — 0.7 — — — — —
Typ —
— — — 1.0 600 350 10 180 60
Ratings 120 140 160 ±15 7 7 100 150
–55 to +150
(Ta = 25°C) Unit
V
V A A W °C °C
(Ta = 25°C...
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