BSD314SPE

BSD314SPE OptiMOS™-P 3 Small-Signal-Transistor Features P-channel Enhancement mode Logic level (4.5V rated) ESD protected Qualified according AEC Q101 100% Lead-free; RoHS compliant Product Summary V DS R DS(on),max V GS=-10 V V GS=-4.5 V ID 30 140 230 -1.5 PG-SOT-363 6 5 4 V mΩ A 1 2 3 Type BSD314SPE Package PG-SOT-363 Tape and Reel Information L6327: 3000 pcs/ reel Marking XDs Lead Free Yes Packing Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 °C T A=70 °C Pulsed drain current Avalanche energy, single pulse I D,pulse E AS T A=25 °C I D=-1.5A, R GS=25 Ω I D=-1.5 A, V DS=-16V, di /dt =-200A/µs, T j,max=150 °C Value -1.5 -1.2 -6.1 6 mJ Unit A Reverse diode d v /dt dv /dt 6 kV/µs Gate source voltage Power dissipation1) Operating and storage temperature ESD Class Soldering Temperature IEC climatic category; DIN IEC 68-1 V GS P tot T j, T stg JESD22-A114 -HBM T A=25 °C ±20 0.5 -55 ... 150 2 (2kV to 4kV) 260 °C 55/150/56 V W °C °C °C Rev 2.1 page 1 2010-03-29 www.DataSheet.in BSD314SPE Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - ambient R thJA 1) Values typ. max. Unit minimal footprint - - 250 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics V (BR)DSS V GS= 0V, I D=-250µA V GS(th) I DSS V DS=VGS, I D=-6.3µA V DS=-30V, V GS=0 V, T j=25 °C V DS=-30V, V GS=0V, T j=1...