BSD316SN

BSD316SN OptiMOS™2 Small-Signal-Transistor Features N-channel Enhancement mode Logic level (4.5V rated) Avalanche rated Qualified according to AEC Q101 100% lead-free; RoHS compliant Product Summary V DS R DS(on),max V GS=10 V V GS=4.5 V ID 30 160 280 1.4 A V mΩ PG-SOT363 6 5 4 1 2 3 Type BSD316SN Package Tape and Reel Information Marking X7s Lead Free Yes Packing Non dry PG-SOT363 L6327: 3000 pcs/ reel Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 °C T A=70 °C Pulsed drain current Avalanche energy, single pulse I D,pulse E AS T A=25 °C I D=1.4 A, R GS=25 Ω I D=1.4 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C Value 1.4 1.1 5.6 3.7 mJ Unit A Reverse diode d v /dt Gate source voltage Power dissipation Operating and storage temperature ESD Class Soldering Temperature IEC climatic category; DIN IEC 68-1 dv /dt V GS P tot T j, T stg 6 ±20 kV/µs V W °C T A=25 °C 0.5 -55 ... 150 JESD22-A114 -HBM 0 (<250V) 260 °C 55/150/56 Rev 2.1 page 1 2009-02-11 www.DataSheet.in BSD316SN Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint1) Values typ. max. Unit - - 250 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current V (BR)DSS V GS=0 V, I D=250 µA V GS(th) I DSS V DS=0 V, I D=3,7 µA...