BSD316SN
OptiMOS™2 Small-Signal-Transistor
Features • N-channel • Enhancement mode • Logic level (4.5V rated) • Avalanc...
BSD316SN
OptiMOS™2 Small-Signal-
Transistor
Features N-channel Enhancement mode Logic level (4.5V rated) Avalanche rated Qualified according to AEC Q101 100% lead-free; RoHS compliant
Product Summary V DS R DS(on),max V GS=10 V V GS=4.5 V ID 30 160 280 1.4 A V mΩ
PG-SOT363
6 5 4
1
2
3
Type BSD316SN
Package
Tape and Reel Information
Marking X7s
Lead Free Yes
Packing Non dry
PG-SOT363 L6327: 3000 pcs/ reel
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 °C T A=70 °C Pulsed drain current Avalanche energy, single pulse I D,pulse E AS T A=25 °C I D=1.4 A, R GS=25 Ω I D=1.4 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C Value 1.4 1.1 5.6 3.7 mJ Unit A
Reverse diode d v /dt Gate source voltage Power dissipation Operating and storage temperature ESD Class Soldering Temperature IEC climatic category; DIN IEC 68-1
dv /dt V GS P tot T j, T stg
6 ±20
kV/µs V W °C
T A=25 °C
0.5 -55 ... 150
JESD22-A114 -HBM
0 (<250V) 260 °C 55/150/56
Rev 2.1
page 1
2009-02-11
www.DataSheet.in
BSD316SN
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint1) Values typ. max. Unit
-
-
250
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current V (BR)DSS V GS=0 V, I D=250 µA V GS(th) I DSS V DS=0 V, I D=3,7 µA...