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1N4465

EIC discrete Semiconductors

(1N4460 - 1N4496) SILICON ZENER DIODES

Certificate TH97/10561QM Certificate TW00/17276EM 1N4460 - 1N4496 and 1N6485 - 1N6491 VZ : 3.3 - 200 Volts PD : 1.5 Wa...



1N4465

EIC discrete Semiconductors


Octopart Stock #: O-689251

Findchips Stock #: 689251-F

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Description
Certificate TH97/10561QM Certificate TW00/17276EM 1N4460 - 1N4496 and 1N6485 - 1N6491 VZ : 3.3 - 200 Volts PD : 1.5 Watts FEATURES : * Silicon power zener diodes * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free SILICON ZENER DIODES M1A 0.085(2.16) 0.075(1.91) 1.00 (25.4) MIN. 0.138(3.51) 0.122(3.10) MECHANICAL DATA : * Case : M1A Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.20 gram (approximately) 0.024(0.60) 0.022(0.55) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS (Rating at 25 °C ambient temperature unless otherwise specified) Rating Power Dissipation at Ta = 25 °C Maximum Forward Voltage at I F = 200 mA Thermal Resistance , Junction to Lead (Note 1) Operating Temperature Storage Temperature Range Note : (1) At 3/8"(10 mm) lead length form body. Symbol PD VF RӨJA TJ TSTG Value 1.5 1.0 42 - 65 to + 175 - 65 to + 175 Unit W V °C/W °C °C Fig. 1 POWER TEMPERATURE DERATING CURVE PD, MAXIMUM DISSIPATION (W) 1.5 1.2 0.9 0.6 L = 3/8" (10 mm) 0.3 0 0 25 50 75 100 125 150 175 Ta, AMBIENT TEMPERATURE (°C) Page 1 of 2 Rev. 03 : November 2, 2006 www.DataSheet.in Certificate TH97/10561QM Certificate TW00/17276EM ELECTRICAL CHARACTERISTICS (Rating at 25 °C ambient temperature unles...




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