ST2SC640

ST 2SC640 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA733 is recommended. On special request, these transistors can be manufactured in different pin configurations. www.DataSheet4U.com TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25℃) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC Ptot Tj TS Value 40 30 5 100 150 150 -55 to +150 Unit V V V mA mW O O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 27/05/2003 ST 2SC640 Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=6V, IC=1mA 1) www.DataSheet4U.com Min. Typ. Max. Unit Current Gain Group R O Y P L Collector Base Breakdown Voltage at IC=100μA Collector Emitter Breakdown Voltage at IC=10mA Emitter Base Breakdown Voltage at IE=10μA Collector Cutoff Current at VCB=40V Emitter Cutoff Current at VEB=3V Collector Saturation Voltage at IC=100mA, IB=10mA Gain Bandwidth Product at VCE=6V, IC=10mA Output Capacitance at VCB=6V, f=1MHz Noise Figure at VCE=6V, IE=0.5mA at f=1KHz, RS=500Ω hFE hFE hFE hFE hFE V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) fT COB 40 7...