isc Silicon NPN Power Transistor
DESCRIPTION ·DC Current Gain -
: hFE = 40(Min.)@ IC= 20mA ·Collector-Emitter Breakdown...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·DC Current Gain -
: hFE = 40(Min.)@ IC= 20mA ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 35V(Min.) ·Complement to Type BD736 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
35
V
VCEO
Collector-Emitter Voltage
35
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
7
A
IB
Base Current-Continuous
Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
1
A
2 W
40
150
℃
Tstg
Storage Temperature Range
-55~150
℃
BD735
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S
isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
VBE(on) Base-Emitter On Voltage
IC= 2A; VCE= 1V
ICES
Collector Cutoff Current
VCE= 35V; VBE= 0
hFE-1
DC Current Gain
IC= 20mA; VCE= 4V
hFE-2
DC Current Gain
IC= 2A; VCE= 1V
BD735
MIN MAX UNIT
35
V
35
V
5
V
0.6
V
1.1
V
0.2
mA
40
40
NOTICE： ISC...
