ST2N4400

ST 2N4400 / 2N4401 NPN Epitaxial Silicon Transistor General purpose transistor Collector Emitter Voltage: VCEO = 40 V Collector Dissipation: PC (max) = 625 mW On special request, these transistors can be manufactured in different pin configurations. www.DataSheet4U.com TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 60 40 6 600 625 150 -55 to +150 Unit V V V mA mW O C C O SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 02/12/2005 ST 2N4400 / 2N4401 Characteristics at Tamb = 25 OC Parameter DC Current Gain at VCE=1V, IC=0.1mA at VCE=1V, IC=1mA at VCE=1V, IC=10mA at VCE=1V, IC=150mA at VCE=2V, IC=500mA Collector Cutoff Current at VCB=35V Emitter Cutoff Current at VEB=5V Collector Emitter Breakdown Voltage at IC=1mA Collector Base Breakdown Voltage at IC=100µA Emitter Base Breakdown Voltage at IE=100µA Collector Emitter Saturation Voltage at IC=150mA, IB=15mA at IC=500mA, IB=50mA Collector Saturation Voltage at IC=150mA, IB=15mA at IC=500mA, IB=50mA Gain Bandwidth Product at VCE=10V, IC=20mA, f=100MHz Collector Base Capacitance at VCB=5V, f=100MHz Turn On Time at VCC=30V, VBE=2V, IC=150mA, IB1=15mA Turn Off Time at VCC=30V, IC=15...