ST2N4403

ST 2N5086 / 2N5087 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the NPN transistor ST 2N5088 and ST 2N5089 are recommended. On special request, these transistors can be manufactured in different pin configurations. www.DataSheet4U.com TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC Ptot Tj TS Value 50 50 3 50 500 150 -55 to +150 Unit V V V mA mW O C C O SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 02/12/2005 ST 2N5086 / 2N5087 Characteristics at Tamb = 25 OC Parameter DC Current Gain at -VCE=5V, -IC=0.1mA at -VCE=5V, -IC= 1mA at -VCE=5V, -IC= 10mA ST 2N5086 ST 2N5087 ST 2N5086 ST 2N5087 ST 2N5086 ST 2N5087 Symbol hFE hFE hFE hFE hFE hFE -V(BR)CBO -V(BR)CEO -V(BR)EBO -ICBO -IEBO -VCE(sat) -VBE(on) fT COB NF Min. 150 200 150 200 150 200 50 50 3 40 Typ. 180 2.8 www.DataSheet4U.com Max. 500 800 0.05 0.05 0.3 0.85 3 Unit V V V µA µA V V MHz pF dB Collector Base Breakdown Voltage at -IC=100µA Collector Emitter Breakdown Voltage at -IC=1mA Emitter Base Breakdown Voltage at -IE=10µA Collector Cutoff Current...