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ST2N5088 Dataheets PDF



Part Number ST2N5088
Manufacturers SEMTECH ELECTRONICS
Logo SEMTECH ELECTRONICS
Description NPN Silicon Epitaxial Planar Transistor
Datasheet ST2N5088 DatasheetST2N5088 Datasheet (PDF)

ST 2N5088 / 2N5089 www.DataSheet4U.com NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector.

  ST2N5088   ST2N5088



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ST 2N5088 / 2N5089 www.DataSheet4U.com NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 35 30 4.5 50 500 150 -55 to +150 Unit V V V mA mW O C C O SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 02/12/2005 ST 2N5088 / 2N5089 Characteristics at Tamb=25 OC Parameter DC Current Gain at VCE=5V, IC=0.1mA at VCE=5V, IC=1mA at VCE=5V, IC=10mA Collector Base Breakdown Voltage at IC=100µA Collector Emitter Breakdown Voltage at IC=1mA Emitter Base Breakdown Voltage at IE=10µA Collector Cutoff Current at VCB=35V Emitter Cutoff Current at VEB=4.5V Collector Saturation Voltage at IC=10mA, IB=1mA Base Emitter Voltage at VCE=5V, IC=10mA Gain Bandwidth Product at VCE=5V, IC=0.5mA Output Capacitance at VCB=10V, f=1MHz Noise Figure at VCE=6V, IC=0.3mA, f=100Hz, RS=10KΩ ST 2N5088 ST 2N5089 ST 2N5088 ST 2N5089 ST 2N5088 ST 2N5089 hFE hFE hFE hFE hFE hFE V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(on) fT COB NF 300 400 300 400 300 400 35 30 4.5 50 180 900 1200 0.05 0.05 0.5 0.8 4 3 V V V µA µA V V MHz pF dB Symbol Min. Typ. www.DataSheet4U.com Max. Unit SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 02/12/2005 ST 2N5088 / 2N5089 www.DataSheet4U.com SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 02/12/2005 ST 2N5088 / 2N5089 www.DataSheet4U.com SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 02/12/2005 ST 2N5088 / 2N5089 www.DataSheet4U.com SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 02/12/2005 .


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