ST2N7000

ST 2N7000 Small Signal MOSFET 200mAmps, 60 Volts N-Channel www.DataSheet4U.com 1. Source 2.Gate 3.Drain TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Rating Drain Source Voltage Drain-Gate Voltage (RGS=1MΩ) Gate-source Voltage - Continuous - Non-repetitive (tp≤50μs) Drain Current - Continuous - Pulsed Total Power Dissipation @ TC=25OC Derate above 25OC Junction Temperature Storage Temperature Range Symbol VDSS VDGR VGS VGSM ID IDM PD Tj TS Value 60 60 ±20 ±40 200 500 350 2.8 150 -55 to +150 Unit V V V Vpk mA mA mW mW/OC O C C O Thermal Characteristics Characteristic Thermal Resistance, Junction to Ambient Symbol RθJA Value 357 Unit O C/W SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 26/08/2005 ST 2N7000 Characteristics at TC=25 OC Characteristic Off Characteristics Drain-Source Breakdown Voltage at VGS=0, ID=10μA Zero Gate Voltage Drain Current at VDS=48V, VGS=0 at VDS=48V, VGS=0, TJ=125 OC Gate-Body Leakage Current, Forward at VGSF=15V, VDS=0 Gate-Body Leakage Current, Reverse at VGSR=-15V, VDS=0 On Characteristics1) Gate Threshold Voltage at VDS= VGS, ID=1mA Static Drain-Source On-Resistance at VGS=10V, ID=500mA at VGS=4.5V, ID=75mA Drain-Source On-Voltage at VGS=10V, ID=500mA at VGS=4.5V, ID=75mA On-State Drain Current at VGS=4.5V, VDS=10V Forward Transconductance at VDS=10V, ID=200mA Dynamic Characteristics Input Capacitance Output ...