2W Internally Matched Power FET
Excelics
• • • • • • 10.7-11.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 30% TYPI...
Description
Excelics
10.7-11.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 30% TYPICAL) EIB FEATURES HIGH IP3(46dBm TYPICAL) +33.5/+33.0dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 9.5/8.5dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE
EIA/EIB1011-2P
www.DataSheet4U.com
Not recommended for new designs. Contact factory. Effective 03/2003 10.7-11.7GHz, 2W Internally Matched Power FET
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
EIA1011-2P SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=10.7-11.7GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Gain at 1dB Compression f=10.7-11.7GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Power Added Efficiency at 1dB compression f=10.7-11.7GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Drain Current at 1dB Compression Output 3 Order Intercept Point f=10.7-11.7GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Saturated Drain Current Vds=3V, Vgs=0V Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=12mA -13 1100
rd
EIB1011-2P MAX MIN 32 7.5 TYP 33.0 8.5 MAX UNIT dBm dB
MIN 32.5 8.5
TYP 33.5 9.5
P1dB G1dB PAE Id1dB IP3 Idss Gm Vp BVgd Rth
30 880 40 1440 1500 -1.0 -15 8 -2.5 1700 1100
25 850 46* 1360 700 -2.0 -15 8
o
% mA dBm 1700 mA mS -3.5 V V C/W
Drain Breakdown Voltage Igd=4.8mA Thermal Resistance (Au-Sn Eutectic Attach)
*Typical –45dBc IM3 at Pout=23dBm/Tone
MAXIMUM RATINGS AT 25OC
SYMBOLS Vds Vgs Ids Igsf Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Ga...
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