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GS880F36T-11.5

GSI Technology

8Mb Sync Burst SRAMs

Preliminary GS880F18/36T-10/11/11.5/12/14 100 Pin TQFP Commercial Temp Industrial Temp Features • Flow through mode oper...


GSI Technology

GS880F36T-11.5

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Description
Preliminary GS880F18/36T-10/11/11.5/12/14 100 Pin TQFP Commercial Temp Industrial Temp Features Flow through mode operation. 3.3V +10%/-5% Core power supply. 2.5V or 3.3V I/O supply. LBO pin for linear or interleaved burst mode. Internal input resistors on mode pins allow floating mode pins. Default to Interleaved Pipelined Mode. Byte write (BW) and/or global write (GW) operation. Common data inputs and data outputs. Clock Control, registered, address, data, and control. Internal Self-Timed Write cycle. Automatic power-down for portable applications. 100-lead TQFP package -10 -11 -11.5 -12 -14 10ns 11ns 11.5ns 12ns 14ns Flow Through tKQ 2-1-1-1 tCycle 10ns 15ns 15ns 15ns 15ns IDD 225mA 180mA 180mA 180mA 175mA 512K x 18, 256K x 36 8Mb Sync Burst SRAMs 10ns - 14ns www.DataSheet4U.com 3.3V VDD 3.3V & 2.5V I/O broadest access to multiple vendor sources. Boards designed with FT pin pads tied low may be stuffed with GSI’s Pipeline/Flow through configurable Burst RAMS or any vendor’s Flow through or configurable Burst SRAM. Bumps designed with the FT pin location tied High or floating must employ a non-configurable Flow through Burst RAM, like this RAM, to achieve Flow through functionality. 88018/32/36TByte Write and Global Write Byte write operation is performed by using byte write enable (BW) input combined with one or more individual byte write signals (Bx). In addition, Global Write (GW) is available for writing all bytes at one time, regardless of the ...




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