EM621FV16BU

EM621FV16BU Series Low Power, 128Kx16 SRAM Document Title 128K x16 bit Low Power and Low Voltage Full CMOS Static RAM www.DataSheet4U.com Revision History Revision No. 0.0 0.1 History Initial Draft 0.1 Revision Revised VOH(2.2v to 2.4v),tOH(15ns to 10ns), tOE-55(30ns to 25ns), tWP-55(45ns to 40ns), tWP-70(55ns to 50ns), tWHZ-70(25ns to 20ns), ICC(2mA to 3mA), ICC1(2mA to 3mA) Fix typo error Draft Date June 28, 2007 July 2, 2007 Remark 0.2 0.2 Revision Nov. 13, 2007 Emerging Memory & Logic Solutions Inc. 4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Tel : +82-64-740-1712 Fax : +82-64-740-1749~1750 / Homepage : www.emlsi.com Zip Code : 690-719 The attached data sheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your questions about device. If you have any questions, please contact the EMLSI office. 1 EM621FV16BU Series Low Power, 128Kx16 SRAM 128K x16 Bit Low Power and Low Voltage CMOS Static RAM FEATURES - Process Technology : 0.15mm Full CMOS - Organization : 128K x16 - Power Supply Voltage => EM621FV16BU Series : 2.7V~3.6V - Low Data Retention Voltage : 1.5V (MIN) - Three state output and TTL Compatible - Packaged product designed for 45/55/70ns - Package Type: 44-TSOP2 PRODUCT FAMILY Power Dissipation Product Family EM621FV16BU-45LF EM621FV16BU-55LF EM621FV16BU-70LF Operating Temperature Industrial (-40 ~ 85oC) Industrial (-40 ~ 85oC) Industrial (-40 ~ 8...