DatasheetsPDF.com

NTMS4N01R2 Dataheets PDF



Part Number NTMS4N01R2
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet NTMS4N01R2 DatasheetNTMS4N01R2 Datasheet (PDF)

NTMS4N01R2 Power MOSFET 4.2 Amps, 20 Volts N−Channel Enhancement−Mode Single SO−8 Package Features • High Density Power MOSFET with Ultra Low RDS(on) Providing Higher Efficiency • Miniature SO−8 Surface Mount Package Saving Board Space; Mounting Information for the SO−8 Package is Provided • IDSS Specified at Elevated Temperature • Drain−to−Source Avalanche Energy Specified • Diode Exhibits High Speed, Soft Recovery • Pb−Free Package is Available Applications • Power Management in Portable .

  NTMS4N01R2   NTMS4N01R2



Document
NTMS4N01R2 Power MOSFET 4.2 Amps, 20 Volts N−Channel Enhancement−Mode Single SO−8 Package Features • High Density Power MOSFET with Ultra Low RDS(on) Providing Higher Efficiency • Miniature SO−8 Surface Mount Package Saving Board Space; Mounting Information for the SO−8 Package is Provided • IDSS Specified at Elevated Temperature • Drain−to−Source Avalanche Energy Specified • Diode Exhibits High Speed, Soft Recovery • Pb−Free Package is Available Applications • Power Management in Portable and Battery−Powered Products, i.e.: Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.0 mW) Gate−to−Source Voltage − Continuous Thermal Resistance, Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Pulsed Drain Current (Note 4) Thermal Resistance, Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Pulsed Drain Current (Note 4) Thermal Resistance, Junction−to−Ambient (Note 3) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Pulsed Drain Current (Note 4) Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 20 Vdc, VGS = 5.0 Vdc, Peak IL = 7.5 Apk, L = 6 mH, RG = 25 W) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds VDSS VDGR VGS RqJA PD ID ID IDM RqJA PD ID ID IDM RqJA PD ID ID IDM TJ, Tstg EAS TL 20 20 ±10 50 2.5 5.9 4.7 25 100 1.25 4.2 3.3 20 162 0.77 3.3 2.6 15 −55 to +150 169 260 V V V °C/W W A A A °C/W W A A A °C/W W A A A °C mJ °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), t ≤ 10 seconds. 2. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), t = steady state. 3. Minimum FR−4 or G−10 PCB, t = Steady State. 4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%. http://onsemi.com 4.2 AMPERES, 20 VOLTS 0.045 W @ VGS = 4.5 V Single N−Channel D G S SO−8 CASE 751 1 STYLE 13 MARKING DIAGRAM AND PIN ASSIGNMENT 1 N.C. 2 Source 3 Source 4 Gate E4N01 AYWW G G Top View 8 Drain 7 Drain 6 Drain 5 Drain E4N01 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NTMS4N01R2 SO−8 2500 / Tape & Reel NTMS4N01R2G SO−8 2500 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 1 January, 2006 − Rev. 3 Publication Order Number: NTMS4N01R2/D NTMS4N01R2 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Note 5) Characteristic Symbol OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) V(BR)DSS Zero Gate Voltage Drain Current (VDS = 12 Vdc, VGS = 0 Vdc, TJ = 25°C) (VDS = 12 Vdc, VGS = 0 Vdc, TJ = 125°C) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 25°C) Gate−Body Leakage Current (VGS = +10 Vdc, VDS = 0 Vdc) IDSS IGSS Gate−Body Leakage Current (VGS = −10 Vdc, VDS = 0 Vdc) IGSS ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc) Temperature Coefficient (Negative) VGS(th) Static Drain−to−Source On−State Resistance (VGS = 4.5 Vdc, ID = 4.2 Adc) (VGS = 2.7 Vdc, ID = 2.1 Adc) (VGS = 2.5 Vdc, ID = 2.0 Adc) Forward Transconductance (VDS = 2.5 Vdc, ID = 2.0 Adc) RDS(on) gFS DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance (VDS = 10 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss Coss Crss SWITCHING CHARACTERISTICS (Notes 6 & 7) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time (VDD = 12 Vdc, ID = 4.2 Adc, VGS = 4.5 Vdc, RG = 2.3 W) Total Gate Charge Gate−Source Charge Gate−Drain Charge (VDS = 12 Vdc, VGS = 4.5 Vdc, ID = 4.2 Adc) td(on) tr td(off) tf Qtot Qgs Qgd BODY−DRAIN DIODE RATINGS (Note 6) Diode Forward On−Voltage (IS = 4.2 Adc, VGS = 0 Vdc) VSD (IS = 4.2 Adc, VGS = 0 Vdc, TJ = 125°C) Reverse Recovery Time trr (IS = 4.2 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) ta tb Reverse Recovery Stored Charge QRR 5. Handling precautions to protect against electrostatic dischar.


NT75451 NTMS4N01R2 NTMS4872N


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)