Document
NTMS4N01R2
Power MOSFET
4.2 Amps, 20 Volts
N−Channel Enhancement−Mode Single SO−8 Package
Features
• High Density Power MOSFET with Ultra Low RDS(on) Providing
Higher Efficiency
• Miniature SO−8 Surface Mount Package Saving Board Space;
Mounting Information for the SO−8 Package is Provided
• IDSS Specified at Elevated Temperature • Drain−to−Source Avalanche Energy Specified • Diode Exhibits High Speed, Soft Recovery • Pb−Free Package is Available
Applications
• Power Management in Portable and Battery−Powered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 1.0 mW)
Gate−to−Source Voltage − Continuous
Thermal Resistance, Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Pulsed Drain Current (Note 4)
Thermal Resistance, Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Pulsed Drain Current (Note 4)
Thermal Resistance, Junction−to−Ambient (Note 3) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Pulsed Drain Current (Note 4)
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 20 Vdc, VGS = 5.0 Vdc, Peak IL = 7.5 Apk, L = 6 mH, RG = 25 W)
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
VDSS VDGR VGS
RqJA PD ID ID IDM
RqJA PD ID ID IDM
RqJA PD ID ID IDM TJ, Tstg EAS
TL
20 20 ±10
50 2.5 5.9 4.7 25
100 1.25 4.2 3.3 20
162 0.77 3.3 2.6 15 −55 to +150 169
260
V V V
°C/W W A A A
°C/W W A A A
°C/W W A A A °C mJ
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided),
t ≤ 10 seconds. 2. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided),
t = steady state. 3. Minimum FR−4 or G−10 PCB, t = Steady State. 4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
http://onsemi.com
4.2 AMPERES, 20 VOLTS 0.045 W @ VGS = 4.5 V
Single N−Channel D
G S
SO−8
CASE 751
1
STYLE 13
MARKING DIAGRAM AND PIN ASSIGNMENT
1 N.C.
2 Source
3 Source
4 Gate
E4N01
AYWW G G
Top View
8 Drain
7 Drain
6 Drain
5 Drain
E4N01 = Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTMS4N01R2
SO−8 2500 / Tape & Reel
NTMS4N01R2G SO−8 2500 / Tape & Reel (Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
1
January, 2006 − Rev. 3
Publication Order Number: NTMS4N01R2/D
NTMS4N01R2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Note 5)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current (VDS = 12 Vdc, VGS = 0 Vdc, TJ = 25°C) (VDS = 12 Vdc, VGS = 0 Vdc, TJ = 125°C) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 25°C)
Gate−Body Leakage Current (VGS = +10 Vdc, VDS = 0 Vdc)
IDSS IGSS
Gate−Body Leakage Current (VGS = −10 Vdc, VDS = 0 Vdc)
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc)
Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−State Resistance (VGS = 4.5 Vdc, ID = 4.2 Adc) (VGS = 2.7 Vdc, ID = 2.1 Adc) (VGS = 2.5 Vdc, ID = 2.0 Adc)
Forward Transconductance (VDS = 2.5 Vdc, ID = 2.0 Adc)
RDS(on) gFS
DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance
(VDS = 10 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
Ciss Coss Crss
SWITCHING CHARACTERISTICS (Notes 6 & 7) Turn−On Delay Time
Rise Time Turn−Off Delay Time Fall Time
(VDD = 12 Vdc, ID = 4.2 Adc, VGS = 4.5 Vdc, RG = 2.3 W)
Total Gate Charge Gate−Source Charge Gate−Drain Charge
(VDS = 12 Vdc, VGS = 4.5 Vdc, ID = 4.2 Adc)
td(on) tr
td(off) tf
Qtot Qgs Qgd
BODY−DRAIN DIODE RATINGS (Note 6)
Diode Forward On−Voltage
(IS = 4.2 Adc, VGS = 0 Vdc)
VSD
(IS = 4.2 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
trr
(IS = 4.2 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms)
ta
tb
Reverse Recovery Stored Charge
QRR
5. Handling precautions to protect against electrostatic dischar.