NTMS4801N

NTMS4801N Power MOSFET Features 30 V, 12 A, N−Channel, SO−8 Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses This is a Pb−Free Device www.DataSheet4U.com http://onsemi.com V(BR)DSS 30 V RDS(ON) MAX 9.0 mW @ 10 V 12.5 mW @ 4.5 V N−Channel D Value 30 ±20 9.9 7.9 PD ID PD ID 1.41 7.5 6.0 0.8 12 9.6 PD IDM TJ, Tstg IS EAS 2.1 35 −55 to 150 2.1 98 W A °C A mJ W A 1 Applications ID MAX 12 A DC−DC Converters Synchronous MOSFET Printers MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJA, t v 10 s (Note 1) Power Dissipation RqJA, t v 10 s(Note 1) Pulsed Drain Current TA = 25°C TA = 70°C TA = 25°C TA = 25°C Steady State TA = 70°C TA = 25°C TA = 25°C TA = 70°C TA = 25°C TA = 25°C, tp = 10 ms Symbol VDSS VGS ID Unit V V A W A G S MARKING DIAGRAM/ PIN ASSIGNMENT Source Source Source Gate 1 4801N AYWWG G 8 Drain Drain Drain Drain SO−8 CASE 751 STYLE 12 Top View Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 30 V, VGS = 10 V, IL = 14 Apk, L = 1.0 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) 4801N = Device Code A = Assembly Location Y =...