NTMFS4941N

NTMFS4941N Power MOSFET Features 30 V, 47 A, Single N−Channel, SO−8 FL Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.DataSheet4U.com http://onsemi.com V(BR)DSS 30 V RDS(ON) MAX 6.2 mW @ 10 V 9.0 mW @ 4.5 V D (5,6) ID MAX 47 A Applications CPU Power Delivery DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA ≤ 10 s (Note 1) Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current Symbol VDSS VGS TA = 25°C TA = 100°C TA = 25°C TA = 25°C TA = 100°C TA = 25°C PD ID PD ID PD IDM IDmax TJ, TSTG IS dV/dt EAS PD ID ID Value 30 ±20 15 9.4 2.56 25 16 7.2 Unit V V A S (1,2,3) W A N−CHANNEL MOSFET G (4) MARKING DIAGRAM D 1 W Steady State TA = 25°C TA = 100°C TA = 25°C TC = 25°C TC =100°C TC = 25°C 9.0 5.7 0.91 47 30 25.5 140 100 −55 to +150 23 7.5 42 A SO−8 FLAT LEAD CASE 488AA STYLE 1 S S S G 4941N AYWWG G D D D W A W A A °C A V/ns mJ A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) TA = 25°C, tp = 10 ms TA = 25°C ORD...