NTMFS4744N

NTMFS4744N Power MOSFET 30 V, 53 A, Single N-Channel, SO-8 FL Features ăLow RDS(on) to Minimize Conduction Losses ăLow Capacitance to Minimize Driver Losses ăOptimized Gate Charge to Minimize Switching Losses ăThese are Pb-Free Devices V(BR)DSS www.DataSheet4U.com http://onsemi.com RDS(on) MAX 10 mW @ 10 V 14 mW @ 4.5 V ID MAX 53 A Applications ăCPU Power Delivery ăDC-DC Converters ăLow Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current tp=10ms Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TC = 25°C TC = 85°C TC = 25°C TA = 25°C PD IDM TJ, TSTG IS dV/dt EAS PD ID PD ID Symbol VDSS VGS ID Value 30 20 11 8.0 2.2 7.0 5.0 0.88 53 38 47.2 106 -55 to +150 46 6.0 286 W A °C A V/ns mJ W W A Unit V V A 30 V N-Channel D G S MARKING DIAGRAM D 1 A SO-8 FLAT LEAD CASE 488AA STYLE 1 S S S G D 4744N AYWWG G D D Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt Single Pulse Drain-to-Source Avalanche Energy (VDD = 50 V, VGS = 10 V, IL = 24 Apk, L = 1.0 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) 4744N = Specific Device Code A = Assembly Location Y = Year WW = Wo...