NTMFS4708N

NTMFS4708N Power MOSFET 30 V, 19 A, Single N-Channel, SOIC-8 FL Features ăFast Switching Times ăLow Gate Charge ăLow RDS(on) ăLow Inductance SOIC-8 Package ăThese are Pb-Free Devices Applications www.DataSheet4U.com http://onsemi.com V(BR)DSS 30 V RDS(on) Typ 7.3 mW @ 10 V 10.1 mW @ 4.5 V ID Max 19 A ăNotebooks, Graphics Cards ăDC-DC Converters ăSynchronous Rectification MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State t ≤ 10 s Power Dissipation (Note 1) Steady State t ≤ 10 s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current TA = 25°C Steady State TA = 85°C TA = 25°C PD IDM TJ, TSTG IS EAS ID TA = 25°C TA = 85°C TA = 25°C TA = 25°C PD Symbol VDSS VGS ID Value 30 ±20 11.5 8.0 19 2.2 6.25 7.8 5.6 1.0 58 -55 to 150 6.25 245 W A °C A mJ A W Unit V V A N-Channel D G S MARKING DIAGRAM & PIN ASSIGNMENT D 4708N SOIC-8 FLAT LEAD AYWWĂ G CASE 488AA G STYLE 1 D 4708N = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) 1 S S S G D D tp ≤ 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy. VDD = 25 V, VGS = 10 V, IPK = 7.0 A, L = 10 mH, RG = 25 W Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C ORDERING INFORMATION Device Package Shipping† NTMFS4708N...