NTMFS4120N

NTMFS4120N Power MOSFET 30 V, 31 A, Single N-Channel, SO-8 Flat Lead Features www.DataSheet4U.com http://onsemi.com V(BR)DSS 30 V RDS(on) Typ 3.5 mW @ 10 V 4.2 mW @ 4.5 V D ID Max (Note 1) 31 A ăLow RDS(on) ăOptimized Gate Charge ăLow Inductance SO-8 Package ăThese are Pb-Free Devices Applications ăNotebooks, Graphics Cards ăDC-DC Converters ăSynchronous Rectification MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1 ) Steady State t v10 s Power Dissipation (Note 1) Steady State t v10 s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current Steady State TA = 25°C TA = 85°C TA = 25°C PD IDM TJ, Tstg IS EAS ID TA = 25°C TA = 85°C TA = 25°C PD TA = 25°C 6.9 11 8.0 0.9 94 -55 to 150 7.0 450 W A °C A mJ A Symbol VDSS VGS ID Value 30 $20 18 13 31 2.2 W Unit V V A G S MARKING DIAGRAM D 1 tp = 10 ms SO-8 FLAT LEAD CASE 488AA STYLE 1 4120N A Y WW G S S S G D 4120N AYWWG G D D Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy (VDD = 30 V, VGS = 10 V, IPK = 30 A, L = 1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) = Specific Device Code = Assembly Location = Year = Work Week = Pb-Free Package TL 260 °C (Note: Microdot may be in either location) THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction-to-Case - Steady State Junction-to-Ambient - Stea...