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NTMD4820N Dataheets PDF



Part Number NTMD4820N
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet NTMD4820N DatasheetNTMD4820N Datasheet (PDF)

NTMD4820N Power MOSFET Features 30 V, 8 A, Dual N-Channel, SOIC-8 www.DataSheet4U.com •ăLow RDS(on) to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăDual SOIC-8 Surface Mount Package Saves Board Space Applications http://onsemi.com V(BR)DSS 30 V RDS(on) Max 20 mW @ 10 V 27 mW @ 4.5 V ID Max 8A •ăDisk Drives •ăDC-DC Converters •ăPrinters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Rating Drain-to-Source V.

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NTMD4820N Power MOSFET Features 30 V, 8 A, Dual N-Channel, SOIC-8 www.DataSheet4U.com •ăLow RDS(on) to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăDual SOIC-8 Surface Mount Package Saves Board Space Applications http://onsemi.com V(BR)DSS 30 V RDS(on) Max 20 mW @ 10 V 27 mW @ 4.5 V ID Max 8A •ăDisk Drives •ăDC-DC Converters •ăPrinters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Rating Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJA t < 10 s (Note 1) Power Dissipation RqJA t < 10 s (Note 1) Pulsed Drain Current TA = 25°C TA = 70°C TA = 25°C TA = 25°C Steady State TA = 70°C TA = 25°C TA = 25°C TA = 70°C TA = 25°C TA = 25°C, tp = 10 ms PD IDM TJ, TSTG IS EAS PD ID PD ID Symbol VDSS VGS ID Value 30 ±20 6.4 5.1 1.28 4.9 3.9 0.75 8.0 6.4 2.0 32 -55 to +150 1.7 60.5 W A °C A mJ W A 8 W Unit V V A N-Channel D G S A MARKING DIAGRAM & PIN ASSIGNMENT D1 D1 D2 D2 8 SOIC-8 CASE 751 STYLE 11 1 S1 G1 S2 G2 1 4820N AYWW G Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy TJ = 25C, VDD = 30 V, VGS = 10 V, IL = 11 Apk, L = 1.0 mH, RG = 25 W Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) 4820N A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb-Free Package ORDERING INFORMATION TL 260 °C Device NTMD4820NR2G Symbol RqJA RqJA RqJF RqJA Max 97.5 62 40 167.5 °C/W Unit Package SOIC-8 (Pb-Free) Shipping† 2500/Tape & Reel THERMAL RESISTANCE RATINGS Rating Junction-to-Ambient – Steady State (Note 1) Junction-to-Ambient – t ≤ 10 s (Note 1) Junction-to-FOOT (Drain) Junction-to-Ambient – Steady State (Note 2) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1. Surface-mounted on FR4 board using 1 inch sq pad size, 1 oz Cu. 2. Surface-mounted on FR4 board using the minimum recommended pad size. ©Ă Semiconductor Components Industries, LLC, 2007 1 December, 2007 - Rev. 0 Publication Order Number: NTMD4820N/D NTMD4820N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)jk Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Tem‐ perature Coefficient Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coeffi‐ cient Drain-to-Source On Resistance Forward Transconductance VGS(TH) VGS(TH)/TJ RDS(on) gFS VGS = 10 V VGS = 4.5 V CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge SWIT.


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