Power MOSFET
NTMD4N03R2 Power MOSFET
4 Amps, 30 Volts N−Channel SO−8 Dual
Features
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• Designed for use in low vo...
Description
NTMD4N03R2 Power MOSFET
4 Amps, 30 Volts N−Channel SO−8 Dual
Features
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Designed for use in low voltage, high speed switching applications Ultra Low On−Resistance Provides
Higher Efficiency and Extends Battery Life − RDS(on) = 0.048 W, VGS = 10 V (Typ) − RDS(on) = 0.065 W, VGS = 4.5 V (Typ) Miniature SO−8 Surface Mount Package − Saves Board Space Diode is Characterized for Use in Bridge Circuits Diode Exhibits High Speed, with Soft Recovery Dc−Dc Converters Computers Printers Cellular and Cordless Phones Disk Drives and Tape Drives
VDSS 30 V
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RDS(ON) TYP 48 mΩ @ VGS = 10 V ID MAX 4.0 A
N−Channel D D
Applications
G S
G S
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Drain Current − Continuous @ TA = 25°C − Single Pulse (tp ≤ 10 ms) Total Power Dissipation @ TA = 25°C (Note 1) Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, Peak IL = 4.45 Apk, L = 8 mH, RG = 25 Ω) Thermal Resistance − Junction−to−Ambient (Note 1) Maximum Lead Temperature for Soldering Purposes for 10 seconds Symbol VDSS VGS ID IDM PD TJ, Tstg EAS Value 30 "20 4.0 12 2.0 −55 to +150 80 Unit Volts Volts Adc Apk Watts °C mJ
8 1 SO−8 CASE 751 STYLE 11
MARKING DIAGRAM & PIN ASSIGNMENTS
Source−1 Gate−1 Source−2 Gate−2 1 2 3 4 (Top View) E4N03 LYWW 8 7 6 5 Drain−1 Drain−1 Drain−2 Drain−2
RqJA T...
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