NTLJS2103P

NTLJS2103P MOSFET – Power, Single, P-Channel, mCool, WDFN, 2X2 mm -12 V, -7.7 A Features Recommended Replacement Device − NTLUS3A40P WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction 2x2 mm Footprint Same as SC−88 Package Lowest RDS(on) Solution in 2x2 mm Package 1.2 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate Drive Low Profile (< 0.8 mm) for Easy Fit in Thin Environments These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications High Side Load Switch DC−DC Converters (Buck and Boost Circuits) Optimized for Battery and Load Management Applications in Portable Equipment Li−Ion Battery Linear Mode Charging MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −12 V Gate−to−Source Voltage VGS ±8.0 V Continuous Drain Current (Note 1) Steady TA = 25°C ID State TA = 85°C −5.9 A −4.2 t ≤ 5 s TA = 25°C −7.7 Power Dissipation (Note 1) Steady PD State TA = 25°C t ≤5 s 1.9 W 3.3 Continuous Drain Current (Note 2) Power Dissipation (Note 2) TA = 25°C ID Steady TA = 85°C State TA = 25°C PD −3.5 A −2.5 0.7 W Pulsed Drain Current tp = 10 ms IDM −24 A Operating Junction and Storage Temperature TJ, TSTG −55 to °C 150 Source Current (Body Diode) (Note 2) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IS −2.7 A TL 260 °C Stresses exceeding Maximum Ratings may damage the device. M...