NTLJD4116N

NTLJD4116N Power MOSFET Features 30 V, 4.6 A, mCoolt Dual N−Channel, 2x2 mm WDFN Package WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction 2x2 mm Footprint Same as SC−88 Lowest RDS(on) Solution in 2x2 mm Package 1.5 V RDS(on) Rating for Operation at Low Voltage Gate Drive Logic Level Low Profile (< 0.8 mm) for Easy Fit in Thin Environments This is a Pb−Free Device V(BR)DSS www.DataSheet4U.com http://onsemi.com RDS(on) MAX 70 mW @ 4.5 V 30 V 90 mW @ 2.5 V 125 mW @ 1.8 V 250 mW @ 1.5 V D 4.6 A ID MAX (Note 1) Applications DC−DC Converters (Buck and Boost Circuits) Low Side Load Switch Optimized for Battery and Load Management Applications in Portable Equipment such as, Cell Phones, PDA’s, Media Players, etc. Level Shift for High Side Load Switch G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State t≤5s Power Dissipation (Note 1) Steady State t≤5s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current TA = 25°C Steady State TA = 85°C TA = 25°C PD IDM TJ, TSTG IS TL ID TA = 25°C TA = 85°C TA = 25°C PD TA = 25°C 2.3 2.5 1.8 0.71 20 −55 to 150 2.0 260 W A °C A °C G1 D2 A Symbol VDSS VGS ID Value 30 ±8.0 3.7 2.7 4.6 1.5 W Unit V V A 1 S N−CHANNEL MOSFET MARKING DIAGRAM WDFN6 CASE 506AN 1 2 JFMG G 3 6 5 4 JF = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either locatio...