NTJS3157N

NTJS3157N Trench Power MOSFET 20 V, 4.0 A, Single N−Channel, SC−88 Features www.DataSheet4U.com http://onsemi.com V(BR)DSS 20 V RDS(on) Typ 45 mW @ 4.5 V 55 mW @ 2.5 V 70 mW @ 1.8 V 4.0 A ID Max Leading Trench Technology for Low RDS(ON) Extending Battery Life Fast Switching for Increased Circuit Efficiency SC−88 Small Outline (2 x 2 mm) for Maximum Circuit Board Utilization, Same as SC−70−6 Pb−Free Packages are Available Applications DC−DC Conversion Low Side Load Switch Cell Phones, Computing, Digital Cameras, MP3s and PDAs D SC−88 (SOT−363) 1 6 D MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State t≤5s Power Dissipation (Note 1) Pulsed Drain Current Steady State TA = 25 °C TA = 85 °C TA = 25 °C TA = 25 °C tp = 10 ms PD IDM TJ, TSTG IS TL Symbol VDSS VGS ID Value 20 ±8.0 3.2 2.3 4.0 1.0 10 −55 to 150 1.6 260 W A Unit V V A G 3 Top View 4 S D 2 5 D MARKING DIAGRAM & PIN ASSIGNMENT D 1 SOT−363 CASE 419B STYLE 28 6 T92 M G G 1 D D G D S Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) °C A °C THERMAL RESISTANCE RATINGS (Note 1) Parameter Junction−to−Ambient – Steady State Junction−to−Ambient − t ≤ 5 s Junction−to−Lead – Steady State Symbol RqJA RqJA RqJL Max 125 80 45 Unit °C/W T92 M G = Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either...