NTHS4501N

NTHS4501N Power MOSFET 30 V, 6.7 A, Single N−Channel, ChipFETt Package Features www.DataSheet4U.com http://onsemi.com Planar Technology Device Offers Low RDS(on) and Fast Switching Speed Leadless ChipFET Package has 40% Smaller Footprint than TSOP−6. Ideal Device for Applications Where Board Space is at a Premium. ChipFET Package Exhibits Excellent Thermal Capabilities Where Heat Transfer is Required. Pb−Free Package is Available in a ChipFET Package V(BR)DSS 30 V RDS(on) Typ 30 mW @ 10 V 40 mW @ 4.5 V ID Max 6.7 A Applications Buck and Boost Converters Optimized for Battery and Load Management Applications in Portable Equipment such as Notebook Computers, MP3 Players, Cell Phones, Digital Cameras, Personal Digital Assistants and Other Portable Applications Charge Control in Battery Chargers G D S N−Channel MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State t≤5s Power Dissipation (Note 1) Steady State t≤5s Pulsed Drain Current TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C IDM TJ, TSTG IS TL PD Symbol VDSS VGS ID Value 30 ±20 4.9 3.5 6.7 1.3 0.7 2.5 20 −55 to 150 1.1 260 A °C D2 M G W Unit V V A 1 8 MARKING DIAGRAM AND PIN ASSIGNMENT D D D S D2 M G 1 D D D G ChipFET CASE 1206A STYLE 1 tp = 10 ms = Specific Device Code = Month Code = Pb−Free Package Operating Junction and Storage Temperature Source Current (Body Diode) Lead T...