NTGS4141N

NTGS4141N Power MOSFET 30 V, 7.0 A, Single N−Channel, TSOP−6 Features Low RDS(on) Low Gate Charge Pb−Free Package is Available Applications www.DataSheet4U.com http://onsemi.com V(BR)DSS RDS(on) TYP 21.5 mW @ 10 V 30 mW @ 4.5 V ID MAX Load Switch Notebook PC Desktop PC MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State t ≤ 10 s Power Dissipation (Note 1) Steady State t ≤ 10 s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current Steady State TA = 25°C TA = 85°C TA = 25°C tp = 10 ms PD IDM TJ, TSTG IS EAS ID TA = 25°C TA = 85°C TA = 25°C TA = 25°C PD Symbol VDSS VGS ID Value 30 ±20 5.0 3.6 7.0 1.0 2.0 3.5 2.5 0.5 21 −55 to 150 2.0 54 W A °C A mJ A W Unit V V A 30 V 7.0 A N−Channel Drain 1 2 5 6 Gate 3 Source 4 MARKING DIAGRAM TSOP−6 CASE 318G STYLE 1 S4 MG G 1 Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VDD = 30 V, IL = 10.4 A, VGS = 10 V, L = 1.0 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) S4 = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) PIN ASSIGNMENT Drain Drain Source 6 5 4 TL 260 °C THERMAL RESISTANCE RATINGS Rating Junction−to−Ambient – Steady State (Note 1) Junction−to−Ambient – t ≤ 10 s (Note 1) Junction−to−Ambient – Steady State (Note 2) Symbol RθJA RθJA RθJA...