NTGS3443B

NTGS3443B Power MOSFET -20 V, -4.2 A, Single P-Channel, TSOP-6 Features www.DataSheet4U.com http://onsemi.com V(BR)DSS RDS(ON) MAX 60 mW @ -4.5 V -20 V 90 mW @ -2.7 V 100 mW @ -2.5 V P-Channel 1 2 5 6 ID MAX -3.7 A -3.1 A -3.0 A ăLow RDS(on) in TSOP-6 Package ă2.5 V Gate Rating ăFast Switching ăThis is a Pb-Free Device Applications ăOptimized for Battery and Load Management Applications in Portable Equipment ăLi Ion Battery Linear Mode Charging ăHigh Side Load Switch ăHDD Switching Circuits, Camera Phone, etc. MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State tv5s Power Dissipation (Note 1) Steady State tv5s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current Steady State TA = 25°C TA = 85°C TA = 25°C tp = 10 ms PD IDM TJ, TSTG TL ID TA = 25°C TA = 85°C TA = 25°C PD TA = 25°C 1.6 -2.7 -2.0 0.7 -15 -55 to 150 260 A W A °C °C 1 Symbol VDSS VGS ID Value -20 $12 -3.7 -2.7 -4.2 1.25 W TSOP-6 CASE 318G STYLE 1 1 SB = Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) 4 A Unit V V 3 MARKING DIAGRAM SB MG G Operating Junction and Storage Temperature Lead Temperature for Soldering Purposes (1/8” from case for 10 s) PIN ASSIGNMENT Drain Drain Source 6 5 4 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Ope...