NTGS3441B

NTGS3441B Power MOSFET -20 V, -3.5 A, Single P-Channel, TSOP-6 Features www.DataSheet4U.com http://onsemi.com ăLow RDS(on) in TSOP-6 Package ă2.5 V Gate Rating ăThis is a Pb-Free Device Applications ăBattery Switch and Load Management Applications in Portable Equipment ăHigh Side Load Switch ăPortable Devices like Games and Cell Phones V(BR)DSS -20 V RDS(on) MAX 90 mW @ -4.5 V 130 mW @ -2.5 V ID MAX -3.0 A -2.4 A MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State tv5s Power Dissipation (Note 1) Steady State tv5s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current Steady State TA = 25°C TA = 70°C TA = 25°C PD IDM TJ, TSTG TL ID TA = 25°C TA = 70°C TA = 25°C TA = 25°C PD Symbol VDSS VGS ID Value -20 $8 -3.0 -2.4 -3.5 1.1 1.6 -2.2 -1.8 0.7 -12 -55 to 150 260 W A °C °C 1 A W Unit V V A 3 P-Channel 1 2 5 6 4 MARKING DIAGRAM TSOP-6 CASE 318G STYLE 1 1 SF = Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) SF MG G tp = 10 ms Operating Junction and Storage Temperature Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) PIN ASSIGNMENT Drain Drain Source 6 5 4 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recom...