NTGD4169F

NTGD4169F Power MOSFET and Schottky Diode Features 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6 Fast Switching Low Gate Change Low RDS(on) Low VF Schottky Diode Independently Connected Devices to Provide Design Flexibility This is a Pb−Free Device www.DataSheet4U.com http://onsemi.com N−CHANNEL MOSFET V(BR)DSS 30 V RDS(on) Max 90 mW @ 4.5 V 125 mW @ 2.5 V ID Max 2.6 A 2.2 A SCHOTTKY DIODE VR Max 30 V VF Max 0.53 V IF Max 1.0 A Applications DC−DC Converters Portable Devices like PDA’s, Cellular Phones, and Hard Drives MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage N−Channel Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State t≤5 s Steady State t≤5 s tp = 10 ms IDM TJ, TSTG IS TL TA = 25°C TA = 85°C TA = 25°C TA = 25°C PD Symbol VDSS VGS ID Value 30 ±12 2.6 1.9 2.9 0.9 1.1 8.6 −25 to 150 0.9 260 A °C A °C W Unit V V A D A G S N−Channel MOSFET K Schottky Diode Pulsed Drain Current Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) MARKING DIAGRAM 1 TSOP−6 CASE 318G STYLE 15 TD MG G SCHOTTKY MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Peak Repetitive Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Symbol VRRM VR IF Symbol RqJA RqJA Value 30 30 1 Unit V V A 1 TD = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdo...