NTD5803N

NTD5803N Power MOSFET Features 40 V, 76 A, Single N−Channel, DPAK Low RDS(on) High Current Capability Avalanche Energy Specified These are Pb−Free Devices CCFL Backlight DC Motor Control Class D Amplifier Power Supply Secondary Side Synchronous Rectification Parameter Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Gate−to−Source Voltage − Non−Repetitive (tp < 10 mS) Continuous Drain Current (RqJC) (Note 1) Power Dissipation (RqJC) (Note 1) Pulsed Drain Current TC = 25°C Steady State TC = 100°C TC = 25°C PD IDM TJ, Tstg IS EAS Symbol VDSS VGS VGS ID Value 40 "20 "30 76 54 83 228 − 55 to 175 76 240 W A °C A mJ 1 2 3 1 2 Unit V V V A S N−CHANNEL MOSFET 4 4 www.DataSheet4U.com http://onsemi.com V(BR)DSS 40 V RDS(on) MAX 10.1 mW @ 5.0 V 7.2 mW @ 10 V D ID MAX 54 A 76 A Applications MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) G tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, VGS = 10 V, RG = 25 W, IL(pk) = 40 A, L = 0.3 mH) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) DPAK CASE 369C (Surface Mount) STYLE 2 3 DPAK CASE 369D (Straight Lead) STYLE 2 MARKING DIAGRAMS & PIN ASSIGNMENT 4 Drain YWW 58 03NG 4 Drain YWW 58 03NG 1 2 3 Gate Drain Source = Year = Work Week = Device Code = Pb−Free Package Publication Order Number: NTD5803N/D TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress...