NTD5865N

NTD5865N N-Channel Power MOSFET 60 V, 43 A, 18 mW Features Low Gate Charge Fast Switching High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Gate−to−Source Voltage − Non−Repetitive (tp < 10 ms) Continuous Drain Current (RqJC) Power Dissipation (RqJC) Steady State TC = 25°C TC = 100°C TC = 25°C Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature VDSS VGS VGS ID PD IDM TJ, Tstg 60 ±20 ±30 43 31 71 192 −55 to 175 V V V A W A °C Source Current (Body Diode) IS 43 A Single Pulse Drain−to−Source L = 0.1 mH Avalanche Energy EAS IAS 36 mJ 27 A Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Junction−to−Case (Drain) RqJC 2.1 Junction−to−Ambient − Steady State (Note 1) RqJA 49 1. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. Unit °C/W http://onsemi.com V(BR)DSS 60 V RDS(on) MAX 18 mW @ 10 V ID MAX 43 A D N−Channel G S 4 4 12 3 DPAK CASE 369C (Surface Mount) STYLE 2 1 2 3 IPAK CASE 369D (Straight Lead) STYLE...