N-Channel Power MOSFET
NTD5867NL
MOSFET – Power, N-Channel
60 V, 20 A, 39 mW
Features
• Low RDS(on) • High Current Capability • 100% Avalanch...
Description
NTD5867NL
MOSFET – Power, N-Channel
60 V, 20 A, 39 mW
Features
Low RDS(on) High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Gate−to−Source Voltage − Non−Repetitive (tp < 10 ms)
Continuous Drain Current (RqJC) Power Dissipation (RqJC)
Steady State
TC = 25°C TC = 100°C TC = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
VDSS VGS VGS
ID
PD
IDM TJ, Tstg
60 ±20 ±30
20 13 36
76 −55 to
150
V V V
A
W
A °C
Source Current (Body Diode)
IS 20 A
Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, VGS = 10 V, RG = 25 W, IL(pk) = 19 A, L = 0.1 mH, TJ = 25°C)
EAS
18 mJ
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Junction−to−Case (Drain)
RqJC
Junction−to−Ambient − Steady State (Note 1) RqJA
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces.
Value 3.5 45
Unit °C/W
© Semiconductor Components Industries, LLC, 2014
May, 2019 − Rev. 3
1
http://onsemi.com
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