NTD5867NL

NTD5867NL MOSFET – Power, N-Channel 60 V, 20 A, 39 mW Features Low RDS(on) High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Gate−to−Source Voltage − Non−Repetitive (tp < 10 ms) Continuous Drain Current (RqJC) Power Dissipation (RqJC) Steady State TC = 25°C TC = 100°C TC = 25°C Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature VDSS VGS VGS ID PD IDM TJ, Tstg 60 ±20 ±30 20 13 36 76 −55 to 150 V V V A W A °C Source Current (Body Diode) IS 20 A Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, VGS = 10 V, RG = 25 W, IL(pk) = 19 A, L = 0.1 mH, TJ = 25°C) EAS 18 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Junction−to−Case (Drain) RqJC Junction−to−Ambient − Steady State (Note 1) RqJA 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces. Value 3.5 45 Unit °C/W © Semiconductor Components Industries, LLC, 2014 May, 2019 − Rev. 3 1 http://onsemi.com V(BR)DSS ...