NVD5803N

NVD5803N Power MOSFET Features 40 V, 85 A, Single N−Channel, DPAK Low RDS(on) High Current Capability Avalanche Energy Specified AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V(BR)DSS 40 V RDS(on) MAX 5.7 mW @ 10 V D ID MAX 85 A Applications DC Motor Drive Reverse Battery Protection Glow Plug MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Continuous Drain Current (RqJC) (Note 1) Power Dissipation (RqJC) (Note 1) Pulsed Drain Current TC = 25°C Steady State TC = 100°C TC = 25°C PD IDM TJ, Tstg IS EAS Symbol VDSS VGS ID Value 40 "20 85 61 83 228 − 55 to 175 85 240 W A °C A mJ 1 2 Unit V V A G S N−CHANNEL MOSFET 4 tp = 10 ms 3 Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, VGS = 10 V, RG = 25 W, IL(pk) = 40 A, L = 0.3 mH) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) DPAK CASE 369AA (Surface Mount) STYLE 2 TL 260 °C MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain YWW V58 03NG 2 1 Drain 3 Gate Source Y WW 5803N G = Year = Work Week = Device Code = Pb−Free Package Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect d...