DatasheetsPDF.com

NUS5531MT Dataheets PDF



Part Number NUS5531MT
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Main Switch Power MOSFET and Single Charging BJT
Datasheet NUS5531MT DatasheetNUS5531MT Datasheet (PDF)

NUS5531MT Main Switch Power MOSFET and Single Charging BJT −12 V, −6.2 A, Single P−Channel FET with Single PNP low Vce(sat) Transistor, 3x3 mm WDFN Package This device integrates one high performance power MOSFET and one low Vce(sat) transistor, greatly reducing the layout space and optimizing charging performance in battery−powered portable electronics. Features V(BR)DSS −12 V http://onsemi.com MOSFET RDS(on) TYP 32 mW @ −4.5 V 44 mW @ −2.5 V ID MAX −6.2 A Low Vce(sat) PNP (Wall/USB) VCEO MAX.

  NUS5531MT   NUS5531MT


Document
NUS5531MT Main Switch Power MOSFET and Single Charging BJT −12 V, −6.2 A, Single P−Channel FET with Single PNP low Vce(sat) Transistor, 3x3 mm WDFN Package This device integrates one high performance power MOSFET and one low Vce(sat) transistor, greatly reducing the layout space and optimizing charging performance in battery−powered portable electronics. Features V(BR)DSS −12 V http://onsemi.com MOSFET RDS(on) TYP 32 mW @ −4.5 V 44 mW @ −2.5 V ID MAX −6.2 A Low Vce(sat) PNP (Wall/USB) VCEO MAX −20 V VEBO MAX −7.0 V IC MAX −2.0 A • • • • • • High Performance Power MOSFET Single Low Vce(sat) Transistor as Charging Power Mux 3.0x3.0x0.8 mm WDFN Package Independent Pin−out Provides Circuit Flexibility Low Profile (<0.8 mm) for Easy Fit in Thin Environments This is a Pb−Free Device 8 1 WDFN8 CASE 506BC MARKING DIAGRAM 1 5531 AYWW G G Applications • Main Switch and Battery Charging Mux for Portable Electronics • Optimized for Commercial PMUs from Top Suppliers (See Figure 2) 5531 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) Emitter 1 8 Base PIN ASSIGNMENT Emitter 2 7 N/C Base NC Collector 3 6 Gate GATE Drain Source 4 (Top View) 5 Drain 8 7 6 5 9 10 Collector 1 2 3 4 Emitter Emitter Collector Source Drain (Bottom View) Figure 1. Simple Schematic ORDERING INFORMATION Device NUS5531MTR2G Package WDFN8 (Pb−Free) Shipping† 3000/Tape & Reel www.DataSheet4U.com †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2008 July, 2008 − Rev. 1 Publication Order Number: NUS5531MT/D NUS5531MT P−Channel Power MOSFET Maximum Ratings (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State TA = 25°C TA = 85°C t≤5s Power Dissipation (Note 1) Steady State t ≤ 10 s Continuous Drain Current (Note 2) Steady State TA = 25°C TA = 25°C TA = 25°C TA = 85°C Power Dissipation (Note 3) Pulsed Drain Current Operating Junction and Storage Temperature Operating Case Temperature (Note 3) Source Current (Body Diode)2 TA = 25°C tp = 10 ms PD IDM TJ, TSTG TC IS TL Symbol RqJA RqJA RqJA RqJA yJC PD ID Symbol VDSS VGS ID Value −12 ±8.0 −5.47 −4.0 −6.2 1.46 2.1 −4.4 −3.2 0.418 −25 −55 to 150 −55 to 125 −2.8 260 W A °C °C A °C A W Units V V A Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) THERMAL RESISTANCE RATINGS Parameter Junction−to−Ambient – Steady State (Note 3) Junction−to−Ambient – t < 10 s (Note 3) Junction−to−Ambient – Steady State (Note 1) Junction−to−Ambient – t < 10 s (Note 1) Junction−to−Case – t < 10 s (Note 3) Max 299 81.4 85.5 58.7 26 Units °C/W °C/W °C/W °C/W °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 sq in [1 oz] including traces). 2. Surface−mounted on FR4 board using 0.5 in sq pad size, 1 oz. Cu. 3. Surface−mounted on FR4 board using 50 sq mm pad size, 1 oz. Cu. P−Channel MOSFET Electrical Characteristics (TJ = 25°C unless otherwise specified) Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS(TH) VGS(TH)/TJ RDS(on) gFS VGS = −4.5 V, ID = −3.0 A VGS = −2.5 V, ID = −3.0 A Forward Transconductance VDS = −16 V, ID = −3.0 A 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2% VGS = 0 V, ID = −250 mA ID = −250 mA, ref to 25°C VGS = 0 V, VDS = −12 V TJ = 25°C TJ = 125°C −12.0 −10.1 −1.0 −10 ±200 nA V mV/°C mA Symbol Test Condition Min Typ Max Unit Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 4) Gate Threshold Voltage www.DataSheet4U.com Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VDS = 0 V, VGS = ±8 V VGS = VDS, ID = −250 mA −0.45 −0.67 2.68 32 44 5.9 −1.1 V mV/°C 40 50 mW S http://onsemi.com 2 NUS5531MT P−Channel MOSFET Electrical Characteristics (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS Forward Recovery Voltage VSD trr ta tb QRR VGS = 0 V, IS = −1.0 A TJ = 25°C TJ = 125°C −0.66 −0.54 70.8 14.3 56.4 44 nC ns −1.2 V td(on) tr td(off) tf VGS = −4.5 V, VDD = −12 V, ID = −3.0 A, RG = 3.0 8 17.5 80 56.5 ns CISS COSS CRSS .


NVD5803N NUS5531MT NUP46V8P5


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)