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NTTFS4821N Dataheets PDF



Part Number NTTFS4821N
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel Power MOSFET
Datasheet NTTFS4821N DatasheetNTTFS4821N Datasheet (PDF)

NTTFS4821N MOSFET – Power, Single, N-Channel, m8FL 30 V, 57 A Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • DC−DC Converters • High Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJ.

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NTTFS4821N MOSFET – Power, Single, N-Channel, m8FL 30 V, 57 A Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • DC−DC Converters • High Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) VDSS 30 V VGS ±20 V TA = 25°C ID 13.5 A TA = 85°C 9.7 TA = 25°C PD 2.1 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID 18.6 A TA = 85°C 13.4 Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain Current RqJA (Note 2) Steady State TA = 25°C TC = 25°C TC = 85°C Power Dissipation RqJA (Note 2) TC = 25°C Continuous Drain Current RqJC (Note 1) TC = 25°C TC = 85°C Power Dissipation RqJC (Note 1) TC = 25°C Pulsed Drain Current TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt PD ID PD ID PD IDM TJ, Tstg IS dV/dt 4.1 W 7.5 A 5.4 0.66 W 57 A 41 38.5 W 171 −55 to +150 38.5 6.0 A °C A V/ns Single Pulse Drain−to−Source Avalanche Energy EAS (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 33 Apk, L = 0.1 mH, RG = 25 W) Lead Temperature for Soldering Purposes TL (1/8″ from case for 10 s) 55 mJ 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. http://onsemi.com V(BR)DSS 30 V RDS(on) MAX 7.0 mW @ 10 V 10.8 mW @ 4.5 V ID MAX 57 A N−Channel MOSFET D (5−8) G (4) S (1,2,3) 1 WDFN8 (m8FL) CASE 511AB FLAT LEAD MARKING DIAGRAM 1 S D S 4821 D S AYWWG D G G D 4821 A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NTTFS4821NTAG WDFN8 1500/Tape & Reel (Pb−Free) NTTFS4821NTWG WDFN8 5000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2011 1 June, 2019 − Rev. 5 Publication Order Number: NTTFS4821N/D NTTFS4821N 2. Surface−mounted on FR4 board using the minimum recommended pad size. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Case (Drain) Junction−to−Ambient – Steady State (Note 3) Junction−to−Ambient – Steady State (Note 4) Junction−to−Ambient – (t ≤ 10 s) (Note 3) 3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size. Symbol RqJC RqJA RqJA RqJA Value 3.25 58.3 188.4 30.6 Unit °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage V(BR)DSS/TJ Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 5) IDSS IGSS VGS = 0 V, VDS = 24 V TJ = 25°C TJ = 125°C VDS = 0 V, VGS = ±20 V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.5 Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance CHARGES AND CAPACITANCES RDS(on) gFS VGS = 10 V to 11.5 V ID = 20 A ID = 10 A VGS = 4.5 V ID = 20 A ID = 10 A VDS = 15 V, ID = 30 A Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Total Gate Charge QG(TOT) SWITCHING CHARACTERISTICS (Note 6) VGS = 0 V, f = 1.0 MHz, VDS = 12 V VGS = 4.5 V, VDS = 15 V, ID = 30 A VGS = 11.5 V, VDS = 15 V, ID = 20 A Turn−On Delay Time td(on) Rise Time Turn−Off Delay Time tr td(off) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W Fall Time tf 5. Pulse Test: pulse width = 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. Typ Max Unit V 25 mV/°C 1.0 mA 10 ±100 nA 1.9 2.5 V 6 mV/°C 5.8 7.0 mW 5.7 8.8 10.8 8.6 53 S 1300 1755 pF 300 405 150 233 10.5 15 nC 1.3 3.9 4.5 24 nC 12 ns 22 16 4.5 http://onsemi.com 2 NTTFS4821N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min SWITCHING .


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