Document
NTTFS4821N
MOSFET – Power, Single, N-Channel, m8FL
30 V, 57 A
Features
• Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• DC−DC Converters • High Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1)
Power Dissipation RqJA (Note 1)
VDSS
30
V
VGS
±20 V
TA = 25°C
ID
13.5 A
TA = 85°C
9.7
TA = 25°C
PD
2.1 W
Continuous Drain Current RqJA ≤ 10 s (Note 1)
TA = 25°C
ID
18.6 A
TA = 85°C
13.4
Power Dissipation RqJA ≤ 10 s (Note 1)
Continuous Drain Current RqJA (Note 2)
Steady State
TA = 25°C
TC = 25°C TC = 85°C
Power Dissipation RqJA (Note 2)
TC = 25°C
Continuous Drain Current RqJC (Note 1)
TC = 25°C TC = 85°C
Power Dissipation RqJC (Note 1)
TC = 25°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode) Drain to Source dV/dt
PD ID
PD ID
PD IDM TJ, Tstg IS dV/dt
4.1 W
7.5
A
5.4
0.66 W
57
A
41
38.5 W
171 −55 to +150
38.5 6.0
A °C
A V/ns
Single Pulse Drain−to−Source Avalanche Energy
EAS
(TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 33 Apk, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
TL
(1/8″ from case for 10 s)
55 mJ 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
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V(BR)DSS 30 V
RDS(on) MAX 7.0 mW @ 10 V 10.8 mW @ 4.5 V
ID MAX 57 A
N−Channel MOSFET D (5−8)
G (4)
S (1,2,3)
1
WDFN8 (m8FL) CASE 511AB FLAT LEAD
MARKING DIAGRAM
1
S
D
S
4821
D
S AYWWG D
G
G
D
4821 A Y WW G
= Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTTFS4821NTAG WDFN8 1500/Tape & Reel (Pb−Free)
NTTFS4821NTWG WDFN8 5000/Tape & Reel (Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
1
June, 2019 − Rev. 5
Publication Order Number: NTTFS4821N/D
NTTFS4821N
2. Surface−mounted on FR4 board using the minimum recommended pad size. THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Junction−to−Case (Drain) Junction−to−Ambient – Steady State (Note 3) Junction−to−Ambient – Steady State (Note 4) Junction−to−Ambient – (t ≤ 10 s) (Note 3) 3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size.
Symbol RqJC RqJA RqJA RqJA
Value 3.25 58.3 188.4 30.6
Unit °C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage V(BR)DSS/TJ Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 5)
IDSS IGSS
VGS = 0 V, VDS = 24 V
TJ = 25°C TJ = 125°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 mA
1.5
Negative Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance CHARGES AND CAPACITANCES
RDS(on) gFS
VGS = 10 V to 11.5 V
ID = 20 A ID = 10 A
VGS = 4.5 V
ID = 20 A ID = 10 A
VDS = 15 V, ID = 30 A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
QG(TOT)
SWITCHING CHARACTERISTICS (Note 6)
VGS = 0 V, f = 1.0 MHz, VDS = 12 V VGS = 4.5 V, VDS = 15 V, ID = 30 A VGS = 11.5 V, VDS = 15 V, ID = 20 A
Turn−On Delay Time
td(on)
Rise Time Turn−Off Delay Time
tr td(off)
VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W
Fall Time
tf
5. Pulse Test: pulse width = 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures.
Typ
Max
Unit
V
25
mV/°C
1.0
mA
10
±100
nA
1.9
2.5
V
6
mV/°C
5.8
7.0
mW
5.7
8.8
10.8
8.6
53
S
1300
1755
pF
300
405
150
233
10.5
15
nC
1.3
3.9
4.5
24
nC
12
ns
22
16
4.5
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NTTFS4821N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
SWITCHING .