NTR4502P

NTR4502P Power MOSFET −30 V, −1.95 A, Single, P−Channel, SOT−23 Features http://onsemi.com V(BR)DSS −30 V RDS(on) TYP 155 mW @ −10 V 240 mW @ −4.5 V P−Channel MOSFET S ID Max (Note 1) −1.95 A Leading Planar Technology for Low Gate Charge / Fast Switching Low RDS(ON) for Low Conduction Losses SOT−23 Surface Mount for Small Footprint (3 X 3 mm) Pb−Free Packages are Available DC to DC Conversion Load/Power Switch for Portables and Computing Motherboard, Notebooks, Camcorders, Digital Camera’s, etc. Battery Charging Circuits Applications G MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Drain Current (Note 1) t < 10 s TA = 25°C TA = 70°C Power Dissipation (Note 1) Continuous Drain Current (Note 1) Power Dissipation (Note 1) Pulsed Drain Current t < 10 s Steady State TA = 25°C TA = 70°C PD IDM TJ, TSTG IS TL PD ID Symbol VDSS VGS ID Value −30 ±20 −1.95 −1.56 1.25 −1.13 −0.90 0.4 −6.8 −55 to 150 −1.25 260 W A °C A °C W A SOT−23 CASE 318 STYLE 21 TR2 M G Unit V V A D MARKING DIAGRAM/ PIN ASSIGNMENT Drain 3 TR2 M G G 1 Gate = Device Code = Date Code* = Pb−Free Package 2 Source Steady State tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8 in from case for 10 s) (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Packag...