LTE-3371T

GaAlAs T-1 3/ 4 Standard 5 Infrared Emitting Diode LTE-3271T/LTE-3371T/LTE-3271TL/LTE-3371TL Features Special for high current and low forward voltage. High power. Available for pulse operating. Wide viewing angle. LTE-3271TL/LTE-3371TL are blue transparent color package. Package Dimensions Description The LTE-3271T/LTE-3371T/LTE-3217TL/LTE-3371TL are high intensity Gallium Aluminum Arsenide infrared emitting diodes mounted in plastic end looking packages. They provide a broad range of intensity selection and are specified under pulsed drive up to 2 Amps. Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.25mm (.010") unless otherwise noted. 3. Protruded resin under flange is 1.5mm (.059") max. 4. Lead spacing is measured where the leads emerge from the package. 5. Specifications are subject to change without notice. Absolute Maximum Ratings at Ta=25 Parameter Power Dissipation Peak Forward Current(300pps, 10 Continuous Forward Current Reverse Voltage Operating Temperature Range Lead Soldering Temperature [1.6mm (.063 in.) from body] s pulse) Maximum Rating 150 2 100 5 -40 -55 260 to +85 to +100 for 5 Seconds Unit mW A mA V www.DataSheet4U.com Storage Temperature Range 10-14 Electrical Optical Characteristics at Ta=25 Parameter Symbol Part No. LTE-3271T *Aperture Radiant Incidence Ee LTE-3271TL LTE-3371T LTE-3371TL LTE-3271T Radiant Intensity Ie LTE-3271TL LTE-3371T LTE-3371TL LTE-3271T Peak Emission Wavelength Spectral Line Half-Width LTE-3271T ...