Type
!"#$%!&™3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters...
Type
!"#$%!&™3 Power-
Transistor
Features
Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications
N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on)
Avalanche rated
Pb-free plating; RoHS compliant
Halogen-free according to IEC61249-2-21
Type
IPP034N03L G
IPB034N03L G
Product Summary V DS R DS(on),max ID
IPP034N03L G IPB034N03L G
30 V 3.4 mW 80 A
Package Marking
PG-TO220-3-1 034N03L
PG-TO263-3 034N03L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
Pulsed drain current2) Avalanche current, single pulse3) Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage 1) J-STD20 and JESD22 Rev. 2.0
I D,pulse I AS E AS
dv /dt
V GS
V GS=4.5 V, T C=25 °C
V GS=4.5 V, T C=100 °C T C=25 °C
T C=25 °C
I D=80 A, R GS=25 W
I D=80 A, V DS=24 V, di /dt =200 A/µs, T j,max=175 °C
page 1
Value 80 80 80 77 400 80 70
6
±20
Unit A
mJ kV/µs V
2010-02-19
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
IPP034N03L G IPB034N03L G
Value
Unit
94
W
-55 ... 175
°C
55/175/56
Parameter
Symbol Conditions
Values
Unit
min. typ. max.
Thermal characteristics
...
